A 0.0487mm2 4Kx8 Metal-Gate Innovative Fuse Memory at 22nm FD-SOI with 1.2V+/-16% Program Voltage, 0.42V Vddmin, and Full Testability

A 4Kx8 Innovative Fuse OTP on 22-nm FD-SOI

“…This indicated the programming is a mixed of over-and under-programming, as an evidence of uncontrollable programming in thermal runaway. On the other hand, the good reliability of I-fuse on 22nm FD-SOI was reported in [8]- [9]. Figs.…”

“…The I-fuse can sustain very high temperatures and has very high reliability due to controlled programming. A 4Kx8 I-fuse array and macro on 22nm FD-SOI based on this program method showed the program voltage/current can be very low at ∼1V/∼1mA [8], [9]. The program status is hard to visually detect by SEM [8].…”

“…The program status is hard to visually detect by SEM [8]. A 4Kx8 macro [9] was shown having almost the same program window as the 4Kx8 array [8], can be read at very low voltage and fully testable [9]. A comparison table [9] with other OTPs [5], [10]- [15] indicates the I-fuse is the best in all figures of merit.…”

“…A 4Kx8 macro [9] was shown having almost the same program window as the 4Kx8 array [8], can be read at very low voltage and fully testable [9]. A comparison table [9] with other OTPs [5], [10]- [15] indicates the I-fuse is the best in all figures of merit. This article is an enhanced version of [9] with more data in different temperatures and process corners, and more analyses on I-fuse technology, testability and qualification.…”

“…A comparison table [9] with other OTPs [5], [10]- [15] indicates the I-fuse is the best in all figures of merit. This article is an enhanced version of [9] with more data in different temperatures and process corners, and more analyses on I-fuse technology, testability and qualification.…”