A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

Abstract

A low-loss high-power single-pole 8-throw antenna switch adopting body self-adapting bias technique in a 0.18-μm thick-film partially depleted silicon-on-insulator complementary metal-oxide-semiconductor process is implemented for multimode multiband cellular applications. A topology with symmetric port design is developed. We employ the body-contacted field-effect transistor to handle high power level and obtain low harmonic distortion. However, the conventional bias method for body-contacted field-effect transistor leads to poor insertion loss (IL), serious imbalanced voltage division, and large die size. Therefore, a new body self-adapting bias scheme is adopted to improve the IL and power handling capability with die area reward by removing the employment of extra biasing resistor and voltage supply at the body. The presented silicon-on-insulator antenna switch utilizing the new body bias strategy reveals similar harmonic performance as a conventional switch version, thanks to the analogous DC bias to the gate and body, while it exhibits effectively lower IL, imbalanced voltage division, and die area. The measured IL and 0.1-dB compression point (P −0.1dB ), at 1.9/2.7 GHz, are roughly 0.52/0.82 dB and 39.2/36.9 dBm, respectively. The overall IL and P −0.1dB are apparently improved by approximately 0.05 to 0.13 dB and 0.5 to 0.8 dBm compared with the conventional version.

A 0.617–2.7 GHz Highly Linear High-Power Dual Port 15 Throws Antenna Switch Module (DP15T-ASM) with Branched-Antenna Technique and Termination Mode

“…In addition to the gate resistor, a series resistor with the gates (RGCM) is used, which increases the effectiveness of the stated trend. Additionally, negative biasing is used for both the gate and body biasing [ 19 , 20 , 21 , 22 , 23 ].…”

“…Therefore, electrons drop into the body and the body voltage varies, which degrades linearity. Furthermore, negative biasing is used for both gate and body biasing [ 19 , 20 , 21 , 22 , 23 ]. By using negative biasing, the device junctions remain in reverse bias, which results in lower leakage and higher linearity.…”

Monolithic MIPI SOI CMOS single-pole fourteen-throw antenna switch module with on-chip transmit filters for cellular handsets

“…The growing diversity of modes, frequency bands, and mobile communication standards in modern smart terminals leads to an increased demand for integrated radio frequency (RF) switches. The primary antenna switch is responsible for connecting the primary antenna to the main cellular multi-mode multi-band (MMMB) transceiver [1,2,3,4]. Designing the primary antenna switch presents a significant challenge as it involves accommodating numerous parallel radio paths within a confined physical space, while maintaining low insertion loss (IL) with excellent isolation and linearity across different channels over a broad frequency range.…”