A 0.15 μm GaN HEMT device to circuit approach towards dual-band ultra-low noise amplifier using defected ground bias technique

Gupta, Manishankar Prasad; Kumar, Sandeep; Caroline, B. Elizabeth; Song, Hanjung; Kumar, Vijay; Gorre, Pradeep

doi:10.1016/j.aeue.2023.154742

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A 0.15 μm GaN HEMT device to circuit approach towards dual-band ultra-low noise amplifier using defected ground bias technique

Cited by 4 publications

References 6 publications

A 28 nm CMOS low-noise amplifier with novel redundant noise cancellation technique beyond ultra-wideband for 6G-based wireless systems

A 28 nm CMOS low-noise amplifier with novel redundant noise cancellation technique beyond ultra-wideband for 6G-based wireless systems

A new design approach of Rat-Race coupler based compact GaN HEMT power amplifier towards flat high efficiency over broadband

GaN radiofrequency components and power amplifiers for next-generation 5G communications

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