A 0.18 μm CMOS direct down-converter for highly integrated 3G receivers

Abstract

This paper presents the design of a high dynamic range direct down-converter for 3G cell-phone applications. The mechanisms responsible for second-order intermodulation distortion are discussed in details, leading to the following design strategy: the transconductor is degenerated by means of an RC filter, an LC network resonating at RF frequency loads the switching pair and carefully matched resistors are used in the output load. Prototypes realized in 0.18 µm CMOS show: + 78 dBm IIP2 minimum among 40 samples, + 10 dBm IIP3, 4 nV/ √Hz input-referred noise density while burning only 4 mA from 1.8 V.