A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique

Yang, Ching-Yuan; Chang, Chih-Hsiung; Lin, Jung-Mao; Weng, Jun-Hong

doi:10.1109/lmwc.2010.2102011

Cited by 17 publications

(6 citation statements)

References 8 publications

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“…The comparison of these VCO with other previously published 10GHz LC-VCO is summarised in Table 3. Table 3 has shown that the proposed 10GHz LC-VCO has achieved an improvement of FOM and phase noise at 1MHz offset frequency by -4.3dBc/Hz and -5.87dBc/Hz compared with similar VCO in [30]. It also has the lowest phase noise compared with VCOs from other literature.…”

Section: Results and Comparisonmentioning

confidence: 82%

Design and analysis of a 10GHz LC-VCO using MEMS inductor

et al. 2012

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This paper presents design and analysis of a 10GHz inductance-capacitance (LC)-Voltage-Controlled Oscillators (VCO) implemented with a very high quality (Q) factor on-chip Micro-Electro-Mechanical Systems (MEMS) inductor using 0.25µm silicon-on-sapphire (SOS) technology. A new symmetric topology of suspended MEMS inductor is proposed to reduce the length of the conductor strip and achieve the lowest series resistance in the metal tracks. This MEMS inductor has been suspended above the high resistivity SOS substrate to minimise the substrate loss and therefore, achieve a very high Q-factor inductor. A maximum Q-factor of 191.99 at 11.7GHz and Q-factor of 189 at 10GHz has been achieved for a 1.13nH symmetric MEMS inductor. The proposed inductor has been integrated with a VCO on the same substrate using the Metal layers in SOS technology removing the need for additional bond wire. The 10GHz LC-VCO has achieved a phase noise of -116.27dBc/Hz and -126.19dBc/Hz at 1MHz and 3MHz of offset frequency, respectively. It consumes 4.725mW of power from 2.5V supply voltage while achieving a Figure of Merit (FOM) of -189.5dBc/Hz.

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Section: Results and Comparisonmentioning

confidence: 82%

Design and analysis of a 10GHz LC-VCO using MEMS inductor

et al. 2012

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“…An X ‐band CMOS VCO with built‐in envelope detection is designed and measured. Compared with other X ‐ and Ku ‐band CMOS VCOs listed in Table , our VCO exhibits wide tuning range of 31.7% and good FoM T of −192.5 dBc/Hz at 1‐MHz offset. The VCO is designed with on‐chip envelope detectors at the output.…”

Section: Resultsmentioning

confidence: 96%

X‐band voltage‐controlled oscillator with built‐in envelope detection

Chen

2013

Micro & Optical Tech Letters

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decreases with increasing R v , however, the stopband attenuation also decreases with increasing R v . This causes a trade-off between these two parameters. In this LTCC BPF design, we wish to achieve the passband insertion loss was lower than 2.0 dB, and the passband return loss was higher than 12 dB. The required stopband attenuation levels are set to values greater than 20 dB above 4.0 GHz to suppress the second harmonic band of the operating frequency. The final prototype element solutions that are chosen to satisfy all the specifications are: C c 5 1.68 pF, L p1 5 0.529 nH, C p1 5 6.86 pF, R 5 255 X. By referring to Figure 4, the U-shaped inductor requires a length of 1.98 mm for having such a specific L p1 value of 0.529 nH.

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“…Complementary LC tank VCO structures presented in [2, 3] have a limited voltage supply and cannot operate in the near‐threshold region. To increase tuning range, a VCO designed in [4] employs a negative‐transconductance back‐gate tuned technique, instead of the conventional MOS varactors. Using an active inductor [5] for the LC tank reduces the quality ( Q ) factor of the tank circuit, resulting in phase noise degradation.…”

Section: Introductionmentioning

confidence: 99%

Design of Ku‐band transformer‐based cross‐coupled complementary LC‐VCO

Jalalifar

Byun

2015

Electron. lett.

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A transformer-based cross-coupled complementary LC voltage-controlled oscillator (VCO) is investigated which is capable of operating at the Ku-band frequency range with low power consumption. The VCO simultaneously achieves low phase noise and low power consumption. The VCO demonstrates a measured tuning range of 12.1-13.1 GHz and a phase noise of −116.4 dBc/Hz at 1 MHz at a centre frequency of 12.4 GHz. The VCO consumes 0.96 mW from a 0.45 V supply voltage with a figure of merit of 198.4. It is implemented in a standard 0.13 µm CMOS process with an area of 0.23 mm 2 .Introduction: One of the most critical blocks in a radio-frequency transceiver is the phase-locked loop (PLL) which is usually a power hungry block. Thus, reducing the power consumption of the PLL can dramatically decrease the power consumption of transceivers. Voltagecontrolled oscillators (VCOs), which operate at the highest frequency, are the most dominant, power-consuming component of the PLL [1]. Complementary LC tank VCO structures presented in [2, 3] have a limited voltage supply and cannot operate in the near-threshold region. To increase tuning range, a VCO designed in [4] employs a negative-transconductance back-gate tuned technique, instead of the conventional MOS varactors. Using an active inductor [5] for the LC tank reduces the quality (Q) factor of the tank circuit, resulting in phase noise degradation. Recently, a low phase noise transformercoupled oscillator in which the secondary winding is connected to the gate of the cross-coupled pair was presented in [6], however it suffers from high power consumption. Using a triple-coil transformer, unwanted parasitic is reduced, so the phase noise of the VCO improves in [7], but the VCO has a narrow tuning range and high power consumption. In this Letter, we propose a transformer-based cross-coupled complementary VCO for the Ku-band frequency range, which can simultaneously achieve low power consumption and low phase noise performance.

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A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique

Cited by 17 publications

References 8 publications

Design and analysis of a 10GHz LC-VCO using MEMS inductor

Design and analysis of a 10GHz LC-VCO using MEMS inductor

X‐band voltage‐controlled oscillator with built‐in envelope detection

Design of Ku‐band transformer‐based cross‐coupled complementary LC‐VCO

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