A 0.65V rail-to-rail constant gm opamp for biomedical applications

Lee, E.K.F.; Lam, A.; Li, Taihu

doi:10.1109/iscas.2008.4542019

Cited by 9 publications

(1 citation statement)

References 7 publications

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“…In comparison to standard MOSFET devices, they have higher transconductance to gate oxide capacitance (g m =C OX ) peak. 1) These devices are used in electro static discharge (ESD), 2) voltage multipliers, ASK demodulators, 3) RF and analog applications, 4,5) high speed circuits, voltage regulators, multiplexers, 6) input=output circuits, 7) input buffer circuits, 8) opamp for bio-medical applications, 9) bandgap reference (BGR) circuits, 10) current reference circuits 11) etc. To capture the correct behavior of zero-V TH MOSFET devices, there is a need of a computationally efficient compact model which can account for all real device effects.…”

Section: Introductionmentioning

confidence: 99%

Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model

Gupta

Agarwal

Lin

et al. 2017

Jpn. J. Appl. Phys.

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In this paper, we present the modeling of zero-threshold voltage (VTH) bulk MOSFET, also called native devices, using enhanced BSIM6 model. Devices under study show abnormally high leakage current in weak inversion, leading to degraded subthreshold slope. The reasons for such abnormal behavior are identified using technology computer-aided design (TCAD) simulations. Since the zero-VTH transistors have quite low doping, the depletion layer from drain may extend upto the source (at some non-zero value of VDS) which leads to punch-through phenomenon. This source–drain leakage current adds with the main channel current, causing the unexpected current characteristics in these devices. TCAD simulations show that, as we increase the channel length (Leff) and channel doping (NSUB), the source–drain leakage due to punch-through decreases. We propose a model to capture the source–drain leakage in these devices. The model incorporates gate, drain, body biases and channel length as well as channel doping dependency too. The proposed model is validated with the measured data of production level device over various conditions of biases and channel lengths.

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