A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range, voltage reference

Abstract

A low-voltage, low-power, low-area, wide-temperature-range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/°C for an extremely wide temperature range of 190°C (À60 to 130°C) while consuming only 4 μW at 0.75 V. It performs a high-order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade-off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18-μm standard CMOS technology and occupies an area of 0.039 mm 2 . The proposed reference circuit is suitable for high-precision, lowenergy-budget applications, such as mobile systems, wearable electronics, and energy harvesting systems.

Design of a Bandgap Voltage Reference Working in Subthreshold Region with Low Voltage, High Precision in a Wide Temperature Range

“…Curvature compensation can greatly improve the precision of bandgap voltage reference but in this case the circuit design will be more complicated [4,5,6]. Besides, the design of operational amplifier is not easy, and the problem of high power consumption still exists.…”

A portable class of 3‐transistor current references with low‐power sub‐0.5 V operation

“…In spite of the interest for low-voltage and low-power current references, only a limited number of topologies have been proposed so far, [6][7][8][9][10][11][12][13] especially if compared with the huge number of solutions proposed for the voltage reference counterpart (eg, see previous studies [14][15][16][17][18][19][20][21][22] ). The above current references achieve nanopower consumption, but they are unable to work with bias voltage (V DD ) lower than 1 V, except for the solution proposed by Cucchi et al, 12 which presents a minimum bias voltage of 0.8 V. It is worth pointing out that even 0.8 V is still too high for most of the emerging solutions for IoT nodes.…”

“…The aforementioned constraints for IoT systems are clearly transferred to the design specifications of current references.In spite of the interest for low-voltage and low-power current references, only a limited number of topologies have been proposed so far, 6-13 especially if compared with the huge number of solutions proposed for the voltage reference counterpart (eg, see previous studies [14][15][16][17][18][19][20][21][22] ). The circuit consists of a 2-transistor block that generates a proportional-to-absolute-temperature or a complementary-toabsolute-temperature voltage and a load transistor.…”

An amplifier‐offset‐insensitive and high PSRR subthreshold CMOS voltage reference

“…1 Although several low-voltage low power reference circuits have recently been presented in [2][3][4][5][6][7][8][9][10][11][12][13] , it is difficult to cover all of the key properties of a voltage reference, such as the temperature coefficient (TC), power supply ripple rejection (PSRR), and power and area consumptions. 1 Although several low-voltage low power reference circuits have recently been presented in [2][3][4][5][6][7][8][9][10][11][12][13] , it is difficult to cover all of the key properties of a voltage reference, such as the temperature coefficient (TC), power supply ripple rejection (PSRR), and power and area consumptions.…”

“…Over the past decades, low-voltage reference generators have received much attention due to the growing interest in extremely low-power applications such as self-powered sensors. 1 Although several low-voltage low power reference circuits have recently been presented in [2][3][4][5][6][7][8][9][10][11][12][13] , it is difficult to cover all of the key properties of a voltage reference, such as the temperature coefficient (TC), power supply ripple rejection (PSRR), and power and area consumptions. For examples, the PSRR at 10 kHz frequency is only −18 dB in 2 , which is hard to meet the specifications in the system with high-frequency noises.…”