A 1.2 V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized Threshold Voltage at Each Pump Stage for Ferroelectric-NAND Flash Memories

Abstract

Excimer laser projection patterning with an ArF (193 nm) source has been employed in the irradiation of thin diamond films. The effect of a number of process parameters including laser fluence and processing ambient on the quality of the etch product has been investigated; scanning electron microscopy shows that good control of etch quality may be achieved with excellent lateral reproduction of images down to 2 µm. Raman scattering and Auger electron spectroscopy of irradiated films have been correlated, and modifications in the diamond surface have been quantified according to processing parameters. Electrical tests on laser modified surfaces show that the reactivities of metals have a major role in the performance of contact metallizations on such a material. The viability of excimer laser etching of diamond as a manufacturing technique is considered.

Impedance Analysis of Controlled-Polarization-Type Ferroelectric-Gate Thin Film Transistor Using Resistor–Capacitor Lumped Constant Circuit

“…Various studies of ferroelectricgate FETs have been conducted since the 1960s. [1][2][3][4][5][6] Siliconbased ferroelectric-gate FETs have the issues of the diffusion of elements from ferroelectric thin films and the formation of SiO 2 thin films at the interface between the ferroelectric thin film and the silicon substrate. To solve these problems, ferroelectric-gate FETs with an insulator layer at the interface between the ferroelectric layer and the semiconductor have been developed to prevent the interaction.…”