A 1–6 GHz analog radio frequency power driver in 90 nm complementary metal‐oxide semiconductor technology for wireless applications

Abstract

SUMMARYOne of the most challenging subsystems for integrated radio frequency (RF) complementary metal-oxide semiconductor (CMOS) solutions is the power amplifier. A 1-6 GHz RF power driver (RFPD) in 90 nm CMOS technology is presented, which receives signals from on-chip RF signal chain components at À12 dBm power levels and produces a 0 dBm signal to on-chip or off-chip 50 Ω loads. A unique unit cell design is developed for the RFPD to offset issues associated with very wide multi-fingered transistors. The RF driver was fabricated as a stand-alone sub-circuit on a 90 nm CMOS die with other sub-circuits. Experimental tests confirmed that the on-chip RFPD operates up to 6 GHz and is able to drive 50 Ω loads to the desired 0 dBm power level. Spur free dynamic range exceeded 70 dB. The measured power gain was 11.6 dB at 3 GHz. The measured 1 dB compression point and input third-order intercept point (IIP3) were À4.7 dBm and À0.5 dBm, respectively. Also, included are modeling, simulation, and measured results addressing issues associated with interfacing the die to a package with pinouts and the package to a printed circuit test fixture. The simulations were made through direct current (DC), alternating current (AC), and transient analysis with Cadence Analog Design Environment. The stability was also verified on the basis of phase margin simulations from extracted circuit net-lists.