A 10&amp;#x03BC;m pitch interconnection technology using micro tube insertion into Al-Cu for 3D applications

Brugiere, B. Goubault de; Marion, F.; Fendler, M.; Mandrillon, Vincent; Hazotte, Alain; Volpert, Marion; Ribot, H.

doi:10.1109/ectc.2011.5898695

Cited by 11 publications

(5 citation statements)

References 8 publications

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“…Hybridization of GaN array with CMOS active matrix, using for example microtube technology provides the fabrication of LED microdisplays with a pixel pitch of 10μm [7]. For smaller pixel pitches, new approaches are needed.…”

Section: Influence Of Size-reductionmentioning

confidence: 99%

25‐4: Investigation and Improvement of 10μm Pixel‐pitch GaN‐based Micro‐LED Arrays with Very High Brightness

Ochsenbein

Daami

Dupré

et al. 2017

Symp Digest of Tech Papers

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Microdisplays based on an array of micro-sized GaN-based light emitting diodes (μLEDs) are very promising for high brightness applications. In this paper we investigate electro-optical properties of μLEDs arrays. A particular focus is made on sizereduction and light emission inhomogeneities. This work led usto process improvements, increasing maximum efficiency by 40%, reducing droop effect and enhancing brightness up to 10 7 cd/m².

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Section: Influence Of Size-reductionmentioning

confidence: 99%

25‐4: Investigation and Improvement of 10μm Pixel‐pitch GaN‐based Micro‐LED Arrays with Very High Brightness

Ochsenbein

Daami

Dupré

et al. 2017

Symp Digest of Tech Papers

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“…Until recently, this operation was done at CEA‐Leti using a flip‐chip technology. It required the dicing of silicon‐based IC's and of GaN micro‐LED arrays into individual chips, and chip to chip assembling using the so‐called microtube technology 14 suitable for low‐temperature hybridization of heterogeneous devices at pixel‐pitch down to 10 μm.…”

Section: Micro‐led Array Manufacturingmentioning

confidence: 99%

Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

et al. 2020

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This paper focuses on the dimensioning of a very bright full color 10 μm‐pitch light‐emitting device (LED) microdisplay for avionics application. Starting from the specifications of head‐mounted display to be used in an augmented reality optical system, a theoretical approach is proposed that enables predicting the specifications of the main technology building blocks entering into the microdisplay manufacturing process flow. By taking into account various material and technological parameters, kept as realistic as possible, it is possible to assess the feasibility of a very bright LED microdisplay (1 Mcd/m2 full white) and to point out the main limitations. The theoretical specifications are then compared with the technical results obtained so far in the framework of the H2020 Clean Sky “HILICO” project. It shows that 350 000 cd/m2 of white emission may be accessible with the present gallium nitride (GaN)‐micro‐LED technology provided a color conversion solution with stable external quantum efficiency of 30% is available. Beyond such level of luminance, the inherent limitations of driving circuit (4 V, 15 μA per pixel) commands working with materials enabling higher external quantum efficiency (EQE). In particular, 10‐μm‐pitch micro‐LEDs with electroluminescence EQE of 15% and color conversion EQE approaching 60% are needed, opening the way to future challenging material and technology research developments.

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“…This leads to a current interest for flip-chip interconnect, showing pitches below 200 µm. [2] Some strategies have been developed to reduce interconnects' pitch in flip-chip assembly, such as micro-tubes [3] hybrid bonding [4]. Currently, the most extensive or strategy used to reduce the size and pitch of interconnects is the copper (Cu) pillar technology, capped on the tip by solder bump (micro-bump).…”

Section: Introductionmentioning

confidence: 99%

Development and Characterizations of Fine Pitch Flip-Chip Interconnection Using Silver Sintering

Gougeon,

Souriau,

Mendizabal

et al. 2024

IMAPSource Proceedings

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Flip-chip interconnects made of silver are promising candidates to overcome the intrinsic limits of solderbased interconnects and match the demand for increased current densities of high-performance microprocessors. Dipbased interconnects have been demonstrated to be a promising approach to form electrical interconnects by sintering paste between copper pillars and pads. However, the quality of the process is limited by residual porosity and poor performances of the sintered joint formed between the pillar and the pad during sintering if a pressure > 50 MPa is not applied in order to decrease the final porosity. In this study, development has been focused on varying key dipping process parameters allowing a pressureless sintering process. Dip-transfer process was optimized on test vehicle and has shown electrical continuity over 700 interconnections with diameter down to 50 μm. We demonstrate high reliability of the process with microstructural observations, tomography X and thermal cycle up to 200 cycles without breakdown.

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A 10μm pitch interconnection technology using micro tube insertion into Al-Cu for 3D applications

Cited by 11 publications

References 8 publications

25‐4: Investigation and Improvement of 10μm Pixel‐pitch GaN‐based Micro‐LED Arrays with Very High Brightness

25‐4: Investigation and Improvement of 10μm Pixel‐pitch GaN‐based Micro‐LED Arrays with Very High Brightness

Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

Development and Characterizations of Fine Pitch Flip-Chip Interconnection Using Silver Sintering

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