A 10-Gb/s high-isolation, 16/spl times/16 crosspoint switch implemented with AlGaAs/GaAs HBT's

Metzger, A.; Chang, Ching‐Wen; Pedrotti, Kenneth D.; Beccue, S.; Wang, Keh-Chung; Asbeck, P.M.

doi:10.1109/4.839919

Cited by 13 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The level of performance achieved makes the crossbar switch well suited for applications in phased array antennas [36] and WDM systems. A 16 Â 16 crosspoint switch has been reported utilizing a production AlGaAs/GaAs HBT process [37]. The switch was able to transmit at data rates up to 10 Gb/s while consuming 11.3 W. Another reported crosspoint switch in a 2 Â 2 configuration in an InP process was shown to consume 0.9 W while transmitting at 25 Gb/s [16].…”

Section: E Bicmos Crossbar Switchmentioning

confidence: 97%

High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology

et al. 2015

View full text Add to dashboard Cite

| In this paper, we discuss the advantages and opportunities presented by high-speed (> 50 GHz) reconfigurable integrated circuits and how they may drive reconfigurable systems applications, such as software-defined radio, radar, and imaging. We propose silicon-germanium (SiGe) BiCMOS as an example technology that enables ultrafast reconfigurable systems and present several circuit designs based on SiGe heterojunction bipolar transistors (HBTs). We compare circuit designs between generations of IBM's SiGe process, including a recent 9HP process featuring devices with a cutoff frequency ðf T Þ of 300 GHz. We describe an architecture for an 8-b 80-Gs/s analog-to-digital converter (ADC) and a 48 Â 48 cell fieldprogrammable gate array (FPGA), which provide powerful solutions for useful functions, such as digital signal processing (DSP) and polyphase filtering. Other circuit concepts are described, including a voltage-controlled oscillator (VCO) with a tuning range of 26 GHz and a high-performance (80 Gb/s) crossbar switch, which provide utility in reconfigurable system applications. Measured results from fabricated implementations of these described systems are presented. We comment on future prospects of these systems and examine an emerging lateral bipolar device (f T ¼ 825 GHz) having 100Â less power consumption than conventional vertical HBTs.

show abstract

Section: E Bicmos Crossbar Switchmentioning

confidence: 97%

High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Topology of proposed and traditional structure of switch matrix a Topology of proposed 5 × 5 chessboard structure and graph of signal flow demonstration b Topology of ideal 8 × 8 cross‐point structure switch matrix in [4]…”

Section: Proposed Structurementioning

confidence: 99%

“…For the architecture of the switch matrix, the common‐mode logic multiplexer structure is used with active switches for its fast switching and regeneration of signal waveform [4], but it has significant direct current (DC) power consumption. Then the cross‐point structure with a passive switch is proposed and used widely for its merits of zero power consumption [5].…”

Section: Introductionmentioning

confidence: 99%

Design of 0.35–1.5 GHz 16‐input and 8‐output switch matrix with 5 × 5 chessboard structure

Zhang

et al. 2018

Electron. lett.

View full text Add to dashboard Cite

This Letter presents a 0.35-1.5 GHz 5 × 5 switch matrix chip with a chessboard structure. In the proposed structure, by reassigning the position and switch mode of 25 passive switch grids which almost consume no DC power, the switch matrix can choose and transmit any eight of 16 input signals to the output ports on four directions at the same time. Throughput and the expansion ability of the switch matrix are markedly improved by flexibly choosing a signal path and reusing the switch grids. Besides, wideband gain compensation circuit modules and gain equalisers are used to compensate for insertion loss and gain flatness of the switch matrix. Fabricated by 0.18 μm SiGe BiCMOS technology, the measured highest insertion gain of a signal path is 10 dB. Meanwhile, insertion gains of all signal paths are higher than −6 dB, and isolations of all signal paths are better than 40 dB.

show abstract