A 10-W <i>X</i>-Band Class-F High-Power Amplifier in a 0.25-<i>μ</i>m GaAs pHEMT Technology

Alizadeh, Amirreza; Yaghoobi, Majid; Meghdadi, Masoud; Medi, Ali; Kiaei, S.

doi:10.1109/tmtt.2020.3033819

Cited by 12 publications

(4 citation statements)

References 28 publications

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“…Various studies are underway to meet these requirements. The Class-F power amplifier is a structure that achieves high efficiency by optimizing the output voltage and current shape through harmonic impedance matching at the transistor drain [1,2]. However, implementing Class-F amplifiers in microwave MMICs poses several challenges.…”

Section: Introductionmentioning

confidence: 99%

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Jeong,

Cho,

et al. 2024

Electronics Letters

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This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class‐F output matching circuit is proposed. DynaFET modelling for GaN HEMT is utilized for accurate HPA MMIC design. The proposed quasi Class‐F HPA MMIC, fabricated using ETRI's 0.15 µm GaN process, achieves an output power of 43.5∼44.5 dBm with a power‐added efficiency of 36∼40.7% within the 9.1∼10.3 GHz frequency bandwidth.

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Section: Introductionmentioning

confidence: 99%

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Jeong,

Cho,

et al. 2024

Electronics Letters

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“…Gallium arsenide (GaAs) high-electron-mobility transistors (HEMTs) represent a well-established technology that is indispensable for various applications in automotive radars, millimeter wave imaging applications, and high-frequency wireless communication typically spanning the X-band (8–12 GHz) and Ka-band (26–40 GHz) typically in the form of discrete devices or monolithic microwave integrated circuits (MMICs). Compared with devices based on other compound semiconductors, GaAs HEMTs can also offer ultralow-noise operation, which is especially suitable for the amplification of weak signals in, e.g., satellite broadcasting.…”

Section: Introductionmentioning

confidence: 99%

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Gucmann,

Meng,

Chvála

et al. 2024

ACS Appl. Electron. Mater.

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High-frequency wireless communication in consumer, defense, and space applications heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka wireless bands (∼8−40 GHz) are covered by GaN and GaAs-based devices, respectively, to the desired output power. GaAs-based high-electron mobility transistors (HEMTs) provide an unprecedented ultralownoise high-frequency operation even at cryogenic temperatures, critically important for the high-fidelity amplification of weak qubit states in quantum computing. Increased output power from GaAsbased devices while maintaining low self-heating is an important but challenging objective. In this study, we used an epitaxial lift-off (ELO) technique to transfer GaAs nanomembranes onto foreign substrates (sapphire, Si, and SiC) and analyzed the thermal properties of the van der Waals-bonded GaAs films by nanosecond transient thermoreflectance (TTR). Electrothermal simulation of a GaAs HEMT was used to predict the thermal performance of the transferred devices, and a significant decrease of ∼30% in the device thermal resistance (R th ) was observed when SiC and diamond substrates were used. Our results also predict that the on-state channel temperature rise can be further decreased by ∼29 to 41% if the GaAs/substrate interface is improved by increased thermal boundary conductance. Our study finds that the ELO-transferred GaAs HEMTs onto foreign highly thermally conductive substrates can significantly improve their thermal performance and allow for higher output while keeping the on-state temperature within the safe operating margin.

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“…Nowadays, radio frequency (RF) PA is widely applied in aerospace, electronic countermeasure, radar system, mobile communication, remote sensing, and so forth 1–5 . To some extent, its performance directly determines the reliable operation of communication system.…”

Section: Introductionmentioning

confidence: 99%

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

Lin,

Jia,

et al. 2023

Int J Numerical Modelling

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As the key component of transceiver, power amplifier (PA) plays an extremely important role in wireless communication system. In order to accurately characterize the performance variation of PA at any temperature, the temperature behavior of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain monolithic microwave integrated circuit (MMIC) PA is modeled in this paper. In this modeling, the resilient back propagation neural network (BPNN) is utilized to do the temperature behavior modeling for this PA. The investigation shows that the minimum mean square error (MSE) of the prediction results is 4.9607 × 10−4, which implies that it is feasible to use this modeling method to characterize the temperature behavior of PA. This modeling not only theoretically overcomes the problem of slow convergence speed of BPNN, but also solves the limitation of experimental devices and time setting. It will provide a more convenient guidance for test engineers.

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A 10-W X-Band Class-F High-Power Amplifier in a 0.25-μm GaAs pHEMT Technology

Cited by 12 publications

References 28 publications

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

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