A 100 W tri-band LDMOS integrated Doherty amplifier for LTE-advanced applications

Abstract

A Doherty amplifier architecture with integrated input splitter and output combiner, allowing bandwidth extension, is described. Based on this approach, a very compact 100W symmetrical LDMOS Doherty amplifier has been designed and characterized in the 1.805 to 2.17 GHz frequency band. It can achieve 15.9 dB maximum gain, 46 to 48 % back-off efficiency and can be linearized at -59.3 dBc ACPR level with a 10 MHz wide LTE signal. The fabricated amplifier is 50 x 50 mm 2 •