A 117.5–155-GHz SiGe ×12 Frequency Multiplier Chain With Push-Push Doublers and a Gilbert Cell-Based Tripler

This paper presents a flexible SiGe monolithic microwave integrated circuit (MMIC) chipset for 120 GHz ultra-wideband frequency-modulated continuous wave radar systems. The highly integrated chipset is implemented with multiple-input and multiple-output radar in mind which leads to transmit and receive MMICs with four integrated channels in each chip. The transmitter achieves an output power of 12.9 dBm with a total power consumption of only 403 mW. The receiver chip incorporates a sub-harmonic approach for suppression of leakage radiation at 120 GHz through a receive channel. Both chips integrate active multiplier chains that are driven by a third reference dual band voltage-controlled oscillator (VCO) MMIC that can deliver an output at center frequencies of 15 or 30 GHz. The reference VCO MMIC demonstrates relative tuning ranges of 32%.

show abstract

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Li,

Fay,

Hwang

2024

IEEE J. Microw.

View full text Add to dashboard Cite

We report a solid-state traveling-wave amplifier (TWA) realized through monolithic integration of transistors with a SiC substrate-integrated waveguide (SIW). The TWA uses a stepped-impedance microstrip line as the input divider, but a low-loss, high-power-capacity SIW as the output combiner. The input signal is distributed to four GaN high-electron mobility transistors (HEMTs) evenly in magnitude but with 90°successive phase delays at the fundamental frequency. The HEMTs are distributed in the SIW in a period of a half wavelength at the second harmonic frequency, so that their outputs are combined coherently at the SIW output. To overcome the limited speed of the HEMTs, they are driven nonlinearly to generate second harmonics, and their fundamental outputs are suppressed with the SIW acting as a high-pass filter. The measured characteristics of the TWA agree with that simulated at the small-signal level, but exceeds that simulated at the large-signal level. For example, under an input of 15 dBm at 70 GHz, the output at 140 GHz is 38-dB above that at 70 GHz. Under an input around 70 GHz and 20 dBm, the output around 140 GHz is 14 dBm with a 3-dB bandwidth of 6%. This is not only the first D-band frequency multiplier based on the GaN HEMT technology, but also one with the highest output power and the lowest fundamental leakage among all D-band multipliers of different transistor technologies. This proof-of-principle demonstration opens the path to improve the power, gain and efficiency of sub-terahertz TWAs with higher-performance transistors and drive circuits. Although the demonstration is through monolithic integration, the approach is applicable to heterogeneous integration with the SIW and transistors fabricated on separate chips.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A 117.5–155-GHz SiGe ×12 Frequency Multiplier Chain With Push-Push Doublers and a Gilbert Cell-Based Tripler

Cited by 8 publications

References 24 publications

A 195–244 GHz CMOS self-mixing frequency tripler with >23 dBc fundamental rejection

A 195–244 GHz CMOS self-mixing frequency tripler with >23 dBc fundamental rejection

120 GHz MIMO FMCW radar chipset in a SiGe bipolar technology

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Contact Info

Product

Resources

About