A 12-18-GHz three-pole RF MEMS tunable filter

Entesari, Kamran; Rebeiz, Gabriel M.

doi:10.1109/tmtt.2005.852761

Cited by 173 publications

(74 citation statements)

References 12 publications

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“…4 due to the symmetry. Therefore, the evenodd admittances, Y 2e and Y 2o , are the same as (12) and (13) and the loading capacitor, C L , is C 1 /2.…”

Section: ) Calculating the Loading Capacitor C L And Even-odd Modmentioning

confidence: 99%

Long Life MEM Switch Technology

Rebeiz¹

2006

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. (From -To) REPORT DATE (DD-MM-YYYY) 31-03-2006 REPORT TYPE FINAL REPORT DATES COVERED SPONSOR/MONITOR'S REPORT NUMBER(S) AFRL-SN-HS-TR-2006-002 DISTRIBUTION / AVAILABILITY STATEMENTDISTRIBUTION A. Approved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTReport developed under contract FA8718-04-C-0029. Microelectromechanical (MEM) switches have already been developed that demonstrate exceptional RF performance but have been plagued by poor reliability. In this work, two new MEM switches were developed with the goal of increasing reliability. The first is a miniature switched capacitor that is 150-300 times smaller than typical RF MEMS switches. The bridges on these switches are 21 micrometers long by 8 micrometers wide and have a switching time of less than 250 ns. Reliability of over 20 billion cycles of 0.5 W of RF power at 13 GHz was demonstrated. The second design is a switched capacitor that is a cantilever type of device. The switch showed a Q of more than 250 at X to Ku-band frequencies, and a reliability of more than 11 billion cycles at 1 W of RF power at 8 GHz. Finally, a tunable filter covering 5.1 and 5.7 GHz (two states) was designed, fabricated and tested. The loss was 1.4 dB, the bandwidth was 5%, and the tunable Q was over 150. These novel designs will be very useful for high reliability RF MEM switches and circuits in the coming years for commercial and defense applications.

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“…4 due to the symmetry. Therefore, the evenodd admittances, Y 2e and Y 2o , are the same as (12) and (13) and the loading capacitor, C L , is C 1 /2.…”

Section: ) Calculating the Loading Capacitor C L And Even-odd Modmentioning

confidence: 99%

Long Life MEM Switch Technology

Rebeiz¹

2006

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“…The growing demand for tunable devices at microwave fre− quencies has motivated the study of some technologies for this purpose, such as ferroelectric materials [1], MEMS [2], etc. Liquid crystals (LC) have become an interesting alter− native for the design of tunable devices.…”

Section: Introductionmentioning

confidence: 99%

Liquid crystal dual-mode band-pass filter with improved performance

Torrecilla

Marcos

Urruchi

et al. 2015

Opto-Electronics Review

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Over the last twenty years, there has been a growing interest in the design of tunable devices at microwave frequencies by us- ing liquid crystals technology. In particular, the use of liquid crystals with high dielectric anisotropy allows manufacturing voltage-controlled devices to operate in a wide frequency range. In this work the frequency response of a liquid crystal band-pass filter with dual-mode microstrip structure has been studied in depth by using a simulation software tool. A reshap- ing of a conventional dual-mode square patch resonator bandpass filter with a square notch, studied in the literature, has been proposed with the goal of improving the filter performance. The main features achieved are a significant increase in the return loss of the filter and a narrowing of a 3-dB bandwidth. Specifically, a reduction in the filter bandwidth from 800 MHz to 600 MHz, which leads to a return loss increase from 6 dB to 12.5 dB, has been achieved. The filter centre frequency can be tuned from 4.54 GHz to 5.19 GHz.

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“…For more complex circuits, a nonlinear electromechanical model in Agilent ADS is used [7], [18] which is compared to the analytical results and to measurement data of circuit examples. Finally, the filter presented in [19] is redesigned based on the proposed design rules to achieve higher IIP3. This paper is a significant extension of a recently published conference paper by the authors [20].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Linearity Deterioration in Multidevice RF MEMS Circuits

Shah

Sterner

Oberhammer

2014

IEEE Trans. Electron Devices

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Abstract-The paper presents for the first time an RF nonlinearity analysis of complex multi-device RF MEMS circuits. The IIP3 of different RF MEMS multi-device tunable-circuit concepts including digital MEMS varactor banks, MEMS switched capacitor banks, distributed MEMS phase shifters and MEMS tunable filters, is investigated. Closed-form analytical formulas for the IIP3 of MEMS multi-device circuit concepts are derived. A nonlinearity analysis, based on measured device parameters, is presented for exemplary circuits of the different concepts using a multi-device nonlinear electromechanical circuit model implemented in Agilent ADS. The results of the nonlinear electromechanical model are also compared to the calculated IIP3 using derived equations for the digital MEMS varactor bank and MEMS switched capacitor bank. The degradation of the overall circuit linearity with increasing number of device stages is also investigated, with the conclusion that the overall circuit IIP3 is reduced by half when doubling the number of stages, if proper design precautions are not taken. Design rules are presented so that the mechanical parameters and thus the IIP3 of the individual device stages can be optimized to achieve a higher overall IIP3 for the whole circuit. In addition, the nonlinearity of a novel MEMS tunable capacitor concept introduced by the authors, based on a MEMS actuator with discrete tuning steps, is discussed and the IIP3 is calculated using derived analytical formulas.

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A 12-18-GHz three-pole RF MEMS tunable filter

Cited by 173 publications

References 12 publications

Long Life MEM Switch Technology

Long Life MEM Switch Technology

Liquid crystal dual-mode band-pass filter with improved performance

Analysis of Linearity Deterioration in Multidevice RF MEMS Circuits

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