A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

Chen, Zheng; Yao, Yiying; Boroyevich, Dushan; Ngo, Khai D. T.; Mattavelli, Paolo; Rajashekara, Kaushik

doi:10.1109/tpel.2013.2283245

Cited by 235 publications

(90 citation statements)

References 30 publications

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“…Furthermore, integration of some of these passive components inside the module can have a profound impact on power density. For example, incorporation of decoupling capacitors allows for low impedance paths for parasitic current oscillation, mitigating some of the drawbacks of high frequency operation [23]. However, there are several limitations of conventional packaging techniques that are hindering the adoption of WBG devices.…”

Section: Power Module Designmentioning

confidence: 99%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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Abstract-The emergence of wide bandgap power semiconductor devices has opened the possibilities of improved electrical performance and power density. Advanced research into wide bandgap power electronics also includes advances in integrated circuit design, semiconductor device modeling, 3D electronic packaging, and computer-aided design of wide bandgap based electronics. These emerging trends are described along with some early results indicating the additional improvements possible in power density. Operation at extreme temperatures also becomes more feasible.Index Terms-Gallium nitride, power integrated circuits, power semiconductor devices, power electronics, silicon carbide, wide bandgap semiconductors.

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Section: Power Module Designmentioning

confidence: 99%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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“…In Fig. 2(a), by employing a 3D lead-frame structure, the symmetrical Kelvin Source connection for each switching device was enhanced, which can realize reduced parasitic inductance [46]. In [47], a "double-ended-sourced" busbar structure in the multi-chip module was used to realize symmetrical power loop, thus the circulating current was reduced and dynamic current was balanced, shown in Fig.…”

Section: ) Improved Wire-bonding Interconnectionmentioning

confidence: 99%

“…2. Improved wire bonding based on (a) Lead frame structure [46], (b) Double-ended-sourced structure [47]. …”

Section: B) Dimple Array Interconnection Technologymentioning

confidence: 99%

Review of State-of-the-Art Integration Technologies in Power Electronic Systems

Wang¹

2017

CPSS TPEA

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“…Along with the development of semiconductor technology, new Wide Band Gap (WBG) semiconductor devices such as SiC devices have gradually come into view [10][11][12][13][14]. SiC devices enjoy a higher bandgap energy, a higher critical electric field, a higher saturation velocity, and superior thermal conductivity directly in comparison with Si devices, which means SiC devices have lower switching loss and no reverse recovery.…”

Section: Introductionmentioning

confidence: 99%

A High-Power-Density Single-Phase Rectifier Based on Three-Level Neutral-Point Clamped Circuits

et al. 2017

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A single-phase three-level converter is suitable for medium-power applications, with an interface voltage that is higher than that of a traditional two-level configuration. The three-level neutral-point clamped converter is adopted using four switches in each bridge arm, which, compared to a two-level rectifier, leads to less voltage stress, a lower switching frequency, and switching loss on switches. The transient current control strategy is designed to control the active power. The single-phase space vector pulse width modulation (SVPWM) with a voltage balance strategy is designed to solve the neutral point voltage fluctuation problem and keep the dc-link voltage stable. A 1.3 kW high-power-density prototype based on SiC MOSFET was built and tested. The experimental results verified the high performance of steady-state and dynamic responses.

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A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

Cited by 235 publications

References 30 publications

Emerging Trends in Silicon Carbide Power Electronics Design

Emerging Trends in Silicon Carbide Power Electronics Design

Review of State-of-the-Art Integration Technologies in Power Electronic Systems

A High-Power-Density Single-Phase Rectifier Based on Three-Level Neutral-Point Clamped Circuits

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