ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187)
DOI: 10.1109/iscas.1998.705442
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A 128×128 imaging array using lateral bipolar phototransistors in a standard CMOS process [fingerprint detection]

Abstract: A 128x128 element photodetector array has been fabricated using lateral bipolar phototransistors in a standard 1.2 pm digital CMOS process. One-bit image processing for the array is accomplished through the use of a current mode comparator. Images focused on to the photodetector array have been successfully captured and are presented in this paper.

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Cited by 2 publications
(2 citation statements)
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“…Additionally, the current-irradiance relationship of the phototransistor is nonlinear, which makes it less than ideal to use in many applications. Like the photodiode, there are a number of possible configurations for the phototransistor in a standard CMOS process, such as the vertical p-np phototransistor and lateral p-n-p phototransistor [67][68][69][70][71]. A cross-section of a vertical p-n-p phototransistor is shown in Figure 17 and an example layout is provided in Figure 18.…”
mentioning
confidence: 99%
“…Additionally, the current-irradiance relationship of the phototransistor is nonlinear, which makes it less than ideal to use in many applications. Like the photodiode, there are a number of possible configurations for the phototransistor in a standard CMOS process, such as the vertical p-np phototransistor and lateral p-n-p phototransistor [67][68][69][70][71]. A cross-section of a vertical p-n-p phototransistor is shown in Figure 17 and an example layout is provided in Figure 18.…”
mentioning
confidence: 99%
“…Fotodiodo Linha de seleção de linha Pixel Amplificador Seguidor de Fonte 16) mostra que mesmo sob a mesma intensidade luminosa, o sinal de saída varia de pixel para pixel em função da variação dos parâmetros do fotodetector e dos transistores.…”
Section: Ddunclassified