A 137 dB Dynamic Range and 0.32 V Self-Powered CMOS Imager With Energy Harvesting Pixels

Chiou, Albert Yen-Chih; Hsieh, Chih-Cheng

doi:10.1109/jssc.2016.2596765

Cited by 24 publications

(3 citation statements)

References 12 publications

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“…Among the reported solutions in the literature, the selected ones were chosen for their outstanding balance between power consumption and frame rate (i.e., iFoM), or for their unique functionalities. The work presented in [11] reports a PWM sensor that operates at 0.32 V, being compatible to the native open-circuit voltages of silicon photodiodes. This work was continued in further publications [13], obtaining a better image quality and lineraity but worse iFoM.…”

Section: Benchmarkingmentioning

confidence: 99%

“…For instance, an auxiliary dynamic vision sensor could trigger the proposed sensor after the recognition of an intruder in surveillance systems [22], motion detection at home [23], traffic monitoring [24], or external operator-triggered scene luminance measurements [25]. Although several authors have already anticipated the advantages of using pulse-width modulation to information in self-powered pixels with shallow power consumption [11], [13], [26], there are very few self-powered asynchronous sensors reported so far. Shi and Bermak advanced a concept of an isolated asynchronous self-powered pixel [12].…”

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A Self-Powered Asynchronous Image Sensor With TFS Operation

2023

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Section: Benchmarkingmentioning

confidence: 99%

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confidence: 99%

A Self-Powered Asynchronous Image Sensor With TFS Operation

2023

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“…Figure 4 shows a block diagram of the proposed edge-detection CIS when using an 8-bit single-slope ADC (SS-ADC). The SS-ADC has been generally used in CIS because of the small area and simple structure [ 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ]. The resolution of the CIS is 1920 × 1440 with a 4-shared APS array.…”

Section: Design Of the Proposed Edge-detection Cmos Image Sensormentioning

confidence: 99%

Design of an Edge-Detection CMOS Image Sensor with Built-in Mask Circuits

Jin¹,

Noh²,

Song³

et al. 2020

Sensors

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In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that has built-in mask circuits to selectively capture either edge-detection images or normal 8-bit images for low-power computer vision applications. To detect the edges of images in the CIS, neighboring column data are compared in in-column memories after column-parallel analog-to-digital conversion with the proposed mask. The proposed built-in mask circuits are implemented in the CIS without a complex image signal processer to obtain edge images with high speed and low power consumption. According to the measurement results, edge images were successfully obtained with a maximum frame rate of 60 fps. A prototype sensor with 1920 × 1440 resolution was fabricated with a 90-nm 1-poly 5-metal CIS process. The area of the 4-shared 4T-active pixel sensor was 1.4 × 1.4 µm2, and the chip size was 5.15 × 5.15 mm2. The total power consumption was 9.4 mW at 60 fps with supply voltages of 3.3 V (analog), 2.8 V (pixel), and 1.2 V (digital).

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An Adaptive Photosensitivity Pixel for Synchronous Spiking Sensor

Nie,

Yang,

Shi

et al. 2024

Circuit Theory & Apps

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This paper introduces a novel spiking pixel based on the synchronous readout operation. This design achieves pixel adaptation sensitivity to light, effectively overcoming a fundamental challenge of conventional pixels. It is achieved by assessing the trigger interval, which is the number of frame periods required for two successive pulses in the pixel's output, and dynamically adjusting the reference voltage. Combined with this technique, this novel spiking pixel can enhance sensitivity under low illumination conditions; simultaneously, it seeks to reduce trigger frequency in high‐light conditions. Analysis of the proposed pixel reveals that it extends dynamic range and reduce the impact of the average relative error, representing a notable improvement over existing traditional pixel designs. When the ratio between the two integration voltage ranges of the proposed pixel is 9, the dynamic range can be extended by 18.26 dB. With integration voltage ranges of 300 and 900 mV, the mean average relative error of the proposed pixel is 0.1261 under varying Process, Voltage, and Temperature conditions, demonstrating superior performance compared to the traditional pixels.

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A 137 dB Dynamic Range and 0.32 V Self-Powered CMOS Imager With Energy Harvesting Pixels

Cited by 24 publications

References 12 publications

A Self-Powered Asynchronous Image Sensor With TFS Operation

A Self-Powered Asynchronous Image Sensor With TFS Operation

Design of an Edge-Detection CMOS Image Sensor with Built-in Mask Circuits

An Adaptive Photosensitivity Pixel for Synchronous Spiking Sensor

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