A 14 nm 1.1 Mb Embedded DRAM Macro With 1 ns Access

Fredeman, Gregory; Plass, D.; Mathews, Abraham; Viraraghavan, Janakiraman; Reyer, Kenneth; Knips, T.; Miller, T.; Gerhard, Elizabeth L.; Kannambadi, Dinesh; Paone, Chris; Lee, Dong‐Ho; Rainey, D.; Sperling, Michael; Whalen, Michael J.; Burns, Steven; Tummuru, Rajesh R.; Ho, H.; Cestero, Alberto; Arnold, N.; Khan, Babar A.; Kirihata, T.; Iyer, Subramanian S.

doi:10.1109/jssc.2015.2456873

Cited by 18 publications

(1 citation statement)

References 7 publications

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“…We show the published cell size for all technologies discussed above in figure 1(c), i.e. SRAM [46][47][48][49][50][51][52][53], eDRAM [54][55][56][57][58][59], eFlash [60][61][62][63][64][65][66][67], DRAM [41,68], eReRAM [69][70][71][72][73], STT-MRAM [42,[74][75][76][77][78][79][80][81][82][83][84][85][86][87]. Note that the SRAM cell sizes down to 7 nm are from literature while the cell sizes (F 2 ) for 3 and 5 nm are linear extrapolation based on the cell sizes from 22 nm to 7 nm.…”

Section: Scaling Analysismentioning

confidence: 99%

Voltage-controlled magnetic tunnel junctions with synthetic ferromagnet free layer sandwiched by asymmetric double MgO barriers

Grèzes

Wong

et al. 2019

J. Phys. D: Appl. Phys.

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Memory and computing applications utilizing voltage-controlled magnetic random-access memory (MRAM) require perpendicular magnetic tunnel junctions (pMTJs) capable of high thermal stability and large write efficiency at advanced technology nodes. We first discuss the scaling requirements for voltage-controlled MRAM to replace various existing memory applications at an advanced CMOS technology node, including cell size, thermal stability, interfacial perpendicular magnetic anisotropy (PMA), and voltage-controlled magnetic anisotropy (VCMA). For replacing volatile memories including SRAM, eDRAM, and DRAM, we employ the retention relaxation technique along with a DRAM-style refresh scheme in the analysis. To enhance both PMA and VCMA at scaled nodes, we explore pMTJs with asymmetric double MgO barriers sandwiching a synthetic ferromagnet (SyF) free layer. In a thin MgO/SyF free layer/thick MgO/fixed layer MTJ stack, the SyF free layer is realized in various ways: single layer (X = Ta, W, Mo, Ir) and bilayers (X = Ta/W, Mo/Ir) of heavy metals insertions in CoFeB/X/CoFeB and Co2FeAl/X/Co2FeAl structures, and multiple insertions in [CoFeB/X]n/CoFeB structures for n = 1–4. A VCMA coefficient of 36 fJ (V m)−1 is achieved in a MgO/CoFeB/Ta/CoFeB/MgO-based MTJ which is comparable to that of the single MgO barrier MTJ. We find PMA enhancement, although with VCMA reduction for an increasing number n of [CoFeB/X]n repetitions. In addition, we demonstrate large TMR of 78%, large interfacial PMA of 1.45 mJ m−2, and VCMA of 65 fJ (V m)−1 in a MgO/Co2FeAl/W/Co2FeAl/MgO-based MTJ annealed above 400 °C.

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