A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology

Furqan, Muhammad; Ahmed, Faisal; Heinemann, B.; Stelzer, Andreas

doi:10.1109/lmwc.2016.2646910

Cited by 53 publications

(8 citation statements)

References 8 publications

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“…To achieve high power, 4-way and 8-way on-chip power combiners are usually used in SiGe PAs. The typical output power is in the range of 7 to 15.5 dBm at different frequency ranging from 110 to 255 GHz [42], [189], [199], [200]. The highest output power achieved by SiGe amplifiers is 22 dBm at around 120 GHz [201].…”

Section: Above 110 Ghzmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: Above 110 Ghzmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…In this frequency range, a number of approaches for signal generation have been published during the last years. They range from frequency multipliers [95] to power amplifiers [93], [96], [97]. Fig.…”

Section: D-band Radar Transceiversmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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“…Baluns are required for differential to single-ended transformation, which eases the characterization of the differential PAs. Examples of differential PAs without utilizing power combining networks are reported in [26]- [29], where a maximum output power of 14 dBm with a peak gain of 27 dB is demonstrated at 160 GHz. The designs of 4-way combined differential PAs at 170 and 240 GHz using T-junctions are discussed in [30], [31].…”

Section: Introductionmentioning

confidence: 99%

168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology

et al. 2020

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This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and an output power higher than 27 dB and 13 dBm, respectively. Then, a 4-way combiner/splitter was designed using low-loss transmission lines at 130-210 GHz. Finally, the combiner was loaded with four single-ended PAs to complete the design of a 4-way combined PA. The chip of the fabricated PA occupies an area of 1.35 mm 2. The realized PA shows a saturated output power of 18.1 dBm with a peak gain of 25.9 dB and power-added efficiency (PAE) of 3.5 % at 185 GHz. A maximum output power of 18.7 dBm with PAE of 4.4 % is achieved at 170 GHz. The 3-dB and 6-dB bandwidth of the PA are 27 and 42 GHz, respectively. In addition, the PA delivers a saturated output power higher than 18 dBm in the frequency range 140-186 GHz. To the best of our knowledge, the power reported in this paper is the highest for G-band SiGe BiCMOS PAs.

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A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology

Cited by 53 publications

References 8 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology

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