A 150-GHz Transmitter With 12-dBm Peak Output Power Using 130-nm SiGe:C BiCMOS Process

Zhou, Peigen; Yan, Pinpin; Yu, Junsheng; Li, Huanbo; Hou, Debin; Gao, Hao; Wang, Hong

doi:10.1109/tmtt.2020.2989112

Cited by 20 publications

(8 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the input and output interface of the channel emulator should have better robustness so that it can be directly connected with the transceiver or instrument. In mm-wave low-frequency bands (below 30 GHz), interfaces such as instrument or RF transceiver outputs typically use coaxial connectors [ 20 ]. When the frequency is higher than 50 GHz, the instrument interface is usually designed as a waveguide interface for more favorable stability and cost.…”

Section: Packaging Methodologymentioning

confidence: 99%

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

et al. 2022

Self Cite

View full text Add to dashboard Cite

In this study, we developed a single-channel channel emulator module with an operating frequency covering 66–67 GHz, including a 66–76 GHz wide dynamic range monolithic integrated circuit designed based on 0.1 µm pHEMT GaAs process, a printed circuit board (PCB) power supply bias network, and low-loss ridge microstrip line to WR12 (60–90 GHz) waveguide transition structure. Benefiting from the on-chip multistage band-pass filter integrated at the local oscillator (LO) and radio frequency (RF) ends, the module’s spurious components at the RF port were greatly suppressed, making the module’s output power dynamic range over 50 dB. Due to the frequency-selective filter integrated in the LO chain, each clutter suppression in the LO chain exceeds 40 dBc. Up and down conversion loss of the module is better than 14 dB over the 66–67 GHz band, the measured IF input P1 dB is better than 10 dBm, and the module consumes 129 mA from a 5 V low dropout supply. A low-loss ridged waveguide ladder transition was designed (less than 0.4 dB) so that the output interface of the module is a WR12 waveguide interface, which is convenient for direct connection with an instrument with E-band (60–90 GHz) waveguide interface.

show abstract

Section: Packaging Methodologymentioning

confidence: 99%

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…Fig. 3 [ 27 ] shows some typical THz power amplifiers based on silicon‐based process [ 70–91 ] . In 2014, Professor Payam Heydari’s research group at the University of California, Irvine designed a PA with an operating frequency of 210 GHz and an output power of 4.6 dBm based on a 32 nm SOI CMOS process [ 73 ] .…”

Section: Silicon‐based Thz Power Amplifiermentioning

confidence: 99%

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Zhou

CHEN

Tang

et al. 2022

Chinese J of Electronics

Self Cite

View full text Add to dashboard Cite

With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz (THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology, its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

show abstract

“…The PA unit cells are based on the neutralized common source unit-cell topology [11][12], the neutralization capacitor is optimized to the balance the stability and gain [13][14]. The unit cell transistors are biased at the optimal current density of Jopt=217.4μA/μm [15].…”

Section: Power Combiner Considerationmentioning

confidence: 99%

A 77 GHz Power Amplifier Design with in-Phase Power Combing for 20 dBm P_sat in a 40-nm CMOS Technology

Zhang

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

Self Cite

View full text Add to dashboard Cite

Detection distance is a critical specification in automotive driving. The output power of a power amplifier is the bottleneck for the detection range. In this work, a design of 77 GHz power amplifier is presented in a 40 nm CMOS technology with a four-way parallel-series power combing technique for achieving a 20 dBm output power (Psat), which meets a 186-meter detection range in the conditional of 30 mm/h rainfall capacity. In this parallel-series power combing technique, distributed active transformers perform load-pull matching and in-phase power combining. It achieves a compact solution for future on-chip antenna integration. This PA is optimized for maximal power-added efficiency of 21.35% with 20 dBm saturated output power at 77 GHz.

show abstract

A 150-GHz Transmitter With 12-dBm Peak Output Power Using 130-nm SiGe:C BiCMOS Process

Cited by 20 publications

References 27 publications

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

Research on Silicon‐Based Terahertz Communication Integrated Circuits

A 77 GHz Power Amplifier Design with in-Phase Power Combing for 20 dBm P_sat in a 40-nm CMOS Technology

Contact Info

Product

Resources

About

A 150-GHz Transmitter With 12-dBm Peak Output Power Using 130-nm SiGe:C BiCMOS Process

Cited by 20 publications

References 27 publications

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

Research on Silicon‐Based Terahertz Communication Integrated Circuits

A 77 GHz Power Amplifier Design with in-Phase Power Combing for 20 dBm Psat in a 40-nm CMOS Technology

Contact Info

Product

Resources

About

A 77 GHz Power Amplifier Design with in-Phase Power Combing for 20 dBm P_sat in a 40-nm CMOS Technology