Proceedings of the IEEE 2014 Custom Integrated Circuits Conference 2014
DOI: 10.1109/cicc.2014.6946030
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A 16kB tile-able SRAM macro prototype for an operating window of 4.8GHz at 1.12V VDD to 10 MHz at 0.5V in a 28-nm HKMG CMOS

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(1 citation statement)
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“…However, the impressive low-power performance of these circuit families addresses only some of the required SOC design features. The We review four recent CMOS circuit advances, whose power is comparable to near-threshold circuits when operating close to its DVFS lower limit ("" 0.5 V) with a smaller chip area B. Embedded SRAM operations with internal signals derived from the system clock in lieu of self-timed circuitry [4] In a clock-derived design, activation of the sense amplifier (SA) starts with a delayed half-cycle clock as shown in Fig. 2.…”
Section: Introductionmentioning
confidence: 99%
“…However, the impressive low-power performance of these circuit families addresses only some of the required SOC design features. The We review four recent CMOS circuit advances, whose power is comparable to near-threshold circuits when operating close to its DVFS lower limit ("" 0.5 V) with a smaller chip area B. Embedded SRAM operations with internal signals derived from the system clock in lieu of self-timed circuitry [4] In a clock-derived design, activation of the sense amplifier (SA) starts with a delayed half-cycle clock as shown in Fig. 2.…”
Section: Introductionmentioning
confidence: 99%