A 17–35 GHz Broadband, High Efficiency PHEMT Power Amplifier Using Synthesized Transformer Matching Technique

Huang, Pei‐Chen; Tsai, Zuo‐Min; Lin, Kun-You; Wang, Huei

doi:10.1109/tmtt.2011.2170091

Cited by 43 publications

(21 citation statements)

References 21 publications

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“…distributed in [95], three-stage PA adopting single devices in [96] and two-stage balanced in [97], a common feature of these examples in 250 nm GaAs is the limited output power (below 23 dBm), possibly requiring off-chip combining to achieve Watt-level operation. A novel strategy to achieve broadband operation is proposed in [98], where the parasitic drain capacitance of the active devices is absorbed into the output matching/combining network, which also provides some immunity to process variations. The single-stage PA adopting two 150 nm GaAs pHEMTs parallel-combined with coupled resonators demonstrates 22.5 dBm output power, 30% PAE and 10 dB gain from 17 to 35 GHz.…”

Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…The currently available technologies that allow electronic circuits to operate at higher frequencies, such as Silicon (Si), Gallium Arsenide (GaAs) and Gallium Nitride (GaN), do not provide enough power at device level to comply with the communication systems requirements for power amplifiers (PAs). Even GaN, which among these has the highest power density (around 4 W/mm), does not reach the required power levels with a single device, thus requiring some kind of power combination at Monolithic Microwave Integrated Circuit (MMIC) level as well as off chip 5‐7 …”

Section: Introductionmentioning

confidence: 99%

Evaluation of a stacked‐FET cell for high‐frequency applications (invited paper)

Piacibello

Costanzo

Giofrè

et al. 2021

Int J Numerical Modelling

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This paper presents the design, electromagnetic simulation strategies and experimental characterisation of a two‐stage stacked‐FET cell in a 100 nm GaN on Si technology around 18.8 GHz, suited for Ka band satellite downlink applications. A good agreement is found between the electromagnetic simulations and the measured performance on the manufactured prototype, thus demonstrating that a successful voltage combining architecture can be obtained in the frequency range of interest with the selected topology, based on a symmetric fork‐like connection between the transistors. This proves the effectiveness of an appropriate electromagnetic simulation set‐up in correctly predicting the crosstalk, which typically affects this structure, leading to a correct stacking operation.

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“…It has an operation frequency range from 24 GHz to 28 GHz, 19.8 dBm P-1dB, and 19.8% associated PAE with a chip size of less than 3.53 mm 2 . A K-band high-efficiency PA using 0.15 m GaAs pHEMT process technology is designed by the authors in [14]. The proposed PA has achieved 22 dBm P-1dB and 30% associated gain with a chip size of 1.5 mm 2 .…”

Section: Introductionmentioning

confidence: 99%

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching

Shang¹,

Xu²,

et al. 2016

Active and Passive Electronic Components

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A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz. A 20 dBm 1 dB-compression-point output power and 40% efficiency are achieved. A novel thermal reliability analysis method based on ICEPAK is proposed also to evaluate its thermal characteristic. The test result by using a QFI InfraScope™infrared imaging system is compared with the simulation result. It agrees well with an accuracy within ±1°C differences, which reflects the advantages of the thermal analysis method with respect to accuracy and convenience for use.

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A 17–35 GHz Broadband, High Efficiency PHEMT Power Amplifier Using Synthesized Transformer Matching Technique

Cited by 43 publications

References 21 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Evaluation of a stacked‐FET cell for high‐frequency applications (invited paper)

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching

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