A 183 GHz low noise amplifier module with 5.5 dB noise figure for the conical-scanning microwave imager sounder (CMIS) program

Raja, R.; Nishimoto, M.; Osgood, B.; Barsky, M.; Sholley, M.; Quon, R.; Barber, G.; Liu, P.; Lai, R.; Hinte, F.; Haviland, G.; Vacek, B.

doi:10.1109/mwsym.2001.967292

Cited by 31 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…29, we plot the cryogenic noise data from [55] and [56], which use HEMT MMICs with In Ga As channels. We have observed a strong decrease in cryogenic noise temperature as a function of gate length compared to the best results from 100 nm gate length MMICs [65], [67]. In addition, the use of 100% InAs channels appears to decrease the amplifier -band noise temperature of 35-nm gate length HEMT LNA MMIC modules, cooled to approximately 20 K ambient.…”

Section: B Cryogenic Low-noise Amplifiers Using 35-nm Hemt Technologymentioning

confidence: 55%

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

View full text Add to dashboard Cite

Abstract-We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.

show abstract

Section: B Cryogenic Low-noise Amplifiers Using 35-nm Hemt Technologymentioning

confidence: 55%

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

View full text Add to dashboard Cite

show abstract

“…Superior microwave and millimeter wave performance of InGaAs/InAlAs/InP high electron mobility transistor (HEMT) microwave monolithic integrated circuits (MMICs) has been demonstrated for space and military applications over the frequency ranges 44 GHz [1][2], 94 GHz [3][4][5], 118 GHz [6][7], 155 GHz [8][9], 183-220 GHz [8,[10][11][12], and beyond 250 GHz [13][14][15]. To ensure the reliability of InAlAs/InGaAs/InP HEMT MMICs during their lifetime operation, it is important to demonstrate the high reliability performance of InAlAs/InGaAs/InP HEMT MMICs subjected to elevated temperature lifetest.…”

Section: Introductionmentioning

confidence: 99%

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

Chou

Leung

Biedenbender

et al. 2010

2010 IEEE International Reliability Physics Symposium

Self Cite

View full text Add to dashboard Cite

Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature lifetesting. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at T ambient of 280 °C projects the median-time-to-failure exceeding 1x10 6 hours at T channel of 125 °C. This result indicates that the promising initial reliability performance was achieved on Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates.

show abstract

“…In wideband data transmission, an LNA needs both of low-noise performance and small group-delay variation in the occupied frequency band (OFB). Some LNAs with low-noise performance at over 100 GHz have been reported [3][4][5]. However, there has been no LNA designed in consideration of the need for small group-delay variation.…”

Section: Introductionmentioning

confidence: 99%

120-GHz-band Low-noise Amplifier with 14-ps Group-delay Variation for 10-Gbit/s Data Transmission

Takahashi

Kosugi

Hirata

et al. 2008

2008 European Microwave Integrated Circuit Conference

View full text Add to dashboard Cite

This paper presents a 120-GHz-band low-noise amplifier (LNA) for a receiver microwave monolithic integrated circuit (MMIC), which is used for a 10-Gbit/s wireless link. The LNA was designed for low-noise performance, a high gain, and low group-delay variation. To achieve enough stability with lownoise performance and low group-delay variation, we introduce a new stabilizing circuit consisting of two coplanar-waveguide stubs. The LNA MMIC was fabricated using 0.1-μm-gate InP high-electron-mobility transistors (HEMTs). We integrated the LNA into a WR-8 (90-140 GHz) waveguide module and evaluated it. The LNA module achieved an averaged noise figure of 5.6 dB, a gain of > 19.5 dB, and group-delay variation of < 14 ps from 117.5 to 132.5 GHz.

show abstract

A 183 GHz low noise amplifier module with 5.5 dB noise figure for the conical-scanning microwave imager sounder (CMIS) program

Cited by 31 publications

References 11 publications

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

120-GHz-band Low-noise Amplifier with 14-ps Group-delay Variation for 10-Gbit/s Data Transmission

Contact Info

Product

Resources

About