A 1V, 2.4GHz low power CMOS common source LNA for WSN applications

Sasilatha, T.; Raja, J.

doi:10.1016/j.aeue.2009.07.009

Cited by 21 publications

(7 citation statements)

References 21 publications

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“…Although these are good designs and operates at GHz frequency, but due to high noise figure and large power dissipation, these designs find difficulty for short range application. In [4], it is described that if signal is distorted or there is some mismatch due to noise, then it also affects the power dissipation due to some finite switch resistance. One of ways to achieve this is to reduce supply voltage.…”

Section: Introductionmentioning

confidence: 99%

“…In this design LNA achieves 1.92 dB noise figure, 8.4 dB power gain and consumes 9 mA current from a 1.8 V power supply. Recently in [4], a 2.4 GHz low power CMOS common source LNA was designed using 0.12µm CMOS technology with 3.9 dB noise figure, 20 dB power gain and power dissipation of 22.6 mW from 1V power supply. Although these are good designs and operates at GHz frequency, but due to high noise figure and large power dissipation, these designs find difficulty for short range application.…”

Section: Introductionmentioning

confidence: 99%

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A 0.1dB NF, 2GHz low power CMOS low noise amplifier

Pandey

Agrawal

Singh

et al. 2013

2013 International Conference on Control, Automation, Robotics and Embedded Systems (CARE)

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Short range applications find significant usage in different areas such as industrial process automation and environmental monitoring. Power consumption and noise figure are important constraint for short range applicaion as it carries limited and irreplaceable power sources. This paper describes a CMOS low noise amplifier (LNA) suitable for low voltage short range application. The reported LNA exhibits the best noise performance when compared with existing circuits. The proposed LNA operates at 2 GHz with noise figure (NF) of 0.1 dB, input and output reflection coefficients are S11, S22 <-10 dB, power gain S21=16 dB and power dissipation of approximately 8 mW from 0.8 V power supply. A standard 90 nm PTM CMOS process is used for simulation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 0.1dB NF, 2GHz low power CMOS low noise amplifier

Pandey

Agrawal

Singh

et al. 2013

2013 International Conference on Control, Automation, Robotics and Embedded Systems (CARE)

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“…Therefore LNA that can minimize interference noise is required for the Bluetooth system. Interference is one of the major challenges addressed in ISM band [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of Inductive Source Degeneration Low Noise Amplifier using Multi-finger Technique

Kusuma¹,

Shanthala²,

P³

2019

IJITEE

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In the current paper, common source Low Noise Amplifier using inductively degenerated technique is designed to meet Radio Frequency (RF) range 2.45 GHz-2.85 GHz. The designed LNA is implemented using single and multi-finger transistor logic. The transistor geometry greater than 300 μm has been split into multiple fingers using multi-finger technology. The schematic is captured using ADS. The performance of LNA for various technologies has been analyzed using PTM 180 nm, PTM 130 nm and PTM 90 nm models. The amplifier with single transistor achieves minimum noise figure of 0.178 dB noise figure and maximum gain of 20.045 dB using 130 nm model technology for Bluetooth applications. Similarly 0.288 dB of minimum noise figure and peak gain of 17.971 dB are obtained using multi-finger MOSFET of PTM 90 nm technologyrespectively.The reverse isolation (S12) below -50 dB is achieved.

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“…Recently, the growth of single-chip ultra low-power CMOS transceivers for the 2.4-GHz-band has been increasing significantly with the birth of the IEEE 802.15.4 standard [1]. This standard demands a longer battery life and lower-cost solutions for applications.…”

Section: Introductionmentioning

confidence: 99%

A 2.4-GHz-Low-Power CMOS RF Transmitter for IEEE 802.15.4 Standard

Nasri¹,

Msolli²,

Helali³

et al. 2012

WSN

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This paper presents the experimental results of a low-power RF transmitter for 2.4-GHz-band IEEE 802.15.4 standard in 0.18-μm CMOS technology. In order to make an adaptive RF transmitter, several factors must be considered. The most important factors are performances, power consumption, output power, noise factor, and cost. The RF transmitter comprises a quadrature passive mixer, and a power amplifier. The proposed RF transmitter consumes only 10.8-mW under a supply voltage of 1.8-V

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A 1V, 2.4GHz low power CMOS common source LNA for WSN applications

Cited by 21 publications

References 21 publications

A 0.1dB NF, 2GHz low power CMOS low noise amplifier

A 0.1dB NF, 2GHz low power CMOS low noise amplifier

Performance Analysis of Inductive Source Degeneration Low Noise Amplifier using Multi-finger Technique

A 2.4-GHz-Low-Power CMOS RF Transmitter for IEEE 802.15.4 Standard

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