A 2–24 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier Using A Compact, Wideband Two-Section Lumped Element Output Impedance Transformer

Lee, Seokchul; Ju, Inchan; Moradinia, Arya; Cho, Moon-Kyu; Gebara, E.; Gu, Huifang; Nicholls, Charles; Cressler, John D.

doi:10.1109/ims19712.2021.9575000

Cited by 5 publications

(1 citation statement)

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“…As the key component of the communication receiver, the low noise amplifier basically determines the bandwidth and noise of the entire system. Distributed low noise amplifiers are considered the best choice for wideband amplification due to their ability to achieve flat gain and good input-output standing wave ratios at large bandwidths and are widely used to implement wideband low noise amplifiers in monolithic microwave integrated circuit (MMIC) technology [1,2,3,4,5,6,7,8,9]. Early reported distributed amplifiers were mostly fabricated using indium phosphide (InP), gallium arsenide (GaAs), and high-speed metal-semiconductor field-effect transistors (MESFETs).…”

Section: Introductionmentioning

confidence: 99%

Design of a 2-18GHz ultra-wideband MMIC low noise amplifier

Liu

Nan

2022

IEICE Electron. Express

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An ultra-wideband low noise amplifier(LNA) is designed based on a uniform distributed topology using 0.25 𝜇m GaAs pseudomorphic high electron mobility transistor(pHEMT) process. In order to increase the amplifier's high frequency gain and gain flatness and consequently widen its bandwidth, the design proposed a new multi-inductor matching technique based on cascode structure. According to the actual measurement, the circuit adopts a +5V power supply, and the current is about 86mA. The bandwidth coverage is 2-18GHz, the noise figure is less than 3.5dB, the power gain is greater than 18dB, and the gain flatness is ± 1dB, which has excellent input and output standing waves, and the saturated output power is greater than 17dBm, and the chip area is 3.1mm*1.3mm.

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