A 2.3 V PHEMT power SP3T antenna switch IC for GSM handsets

Gu, Zeji; Johnson, David A.; Belletete, S.; Frykund, D.

doi:10.1109/gaas.2003.1252360

Cited by 6 publications

(2 citation statements)

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“…Correspondingly, the applied RF voltage is being divided between elementary single-gate devices leading to higher overall switching powers (see, e.g. [9], [10]). III-N RF switches are capable of very high RF switching powers due to high breakdown voltages [14].…”

Section: Multi-gate C 3 Rf Switchesmentioning

confidence: 99%

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Novel RF devices with multiple capacitively-coupled electrodes

Simin

Gaška

Shur

2009

2009 IEEE MTT-S International Microwave Symposium Digest

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We present operation concepts and performance characteristics of novel microwave devices and structures using Oxide-AlGaN/GaN Heterostructures with multiple capacitivelycoupled contacts (C 3 ). The C 3 electrodes do not require annealing and, hence, such devices with tight electrode spacing can be fabricated using a self-aligned process. To illustrate the advantages of C 3 -technology, we demonstrate multi-gate C 3 -RF switches, RF switches with side control electrodes and novel RF-TLM test structures for layer and contact parameter extraction.

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Section: Multi-gate C 3 Rf Switchesmentioning

confidence: 99%

“…As an example, GaAs technology uses multi-gate RF switches to increase the switching powers and the isolation in the OFF-state [9,10]. Due to fully self-aligned technology, C 3 devices are ideally suitable for multi-gate configurations.…”

Section: Introductionmentioning

confidence: 99%