2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)
DOI: 10.1109/mwsym.2002.1011804
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A 2.4 GHz high efficiency SiGe HBT power amplifier with high-Q LTCC harmonic suppression filter

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Cited by 20 publications
(11 citation statements)
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“…The comparison of the developed PA with some previous PAs matched by filters is summarized in Table I. The PAs in [8] and [9] are class F thus the PAE are higher. With regard to the comparison of functionalities of BPFs, the proposed approach offers the easiest method to design the OMN.…”
Section: Design Examplementioning
confidence: 99%
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“…The comparison of the developed PA with some previous PAs matched by filters is summarized in Table I. The PAs in [8] and [9] are class F thus the PAE are higher. With regard to the comparison of functionalities of BPFs, the proposed approach offers the easiest method to design the OMN.…”
Section: Design Examplementioning
confidence: 99%
“…In [7], the tunable MEMs BPF was installed at the input of the PA to get tunable frequency characteristic. [8]- [10] proposed utilizing the filters as part of the OMN of the PAs. In [8], LTCC low pass filter (LPF) was integrated to suppress harmonics.…”
Section: Introductionmentioning
confidence: 99%
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“…Using the HPADS simulator, the number of power cells for each stage, the impedances for adequate power outputs, and the corresponding passive networks for input, inter-stage, and output matching were determined [4]. The schematic of the input and output stages of the power amplifier are shown in Figure 7.…”
Section: Validation Of Test Strategymentioning
confidence: 99%
“…Additionally, due to its full compatibility to standard silicon process, SiGe BiCMOS technology enables IC designers to easily integrate PA with other modules to realize real single-chip RF transceivers, resulting in better chip performance and lower system costs. Several power amplifiers using SiGe HBT technology have been reported recently [3][4][5].…”
Section: Introductionmentioning
confidence: 99%