A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections

Shen, Yuting; Li, Hanyue; Cantatore, Eugenio; Harpe, Pieter

doi:10.1109/isscc42615.2023.10067789

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Cited by 4 publications

References 7 publications

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An 11 nW, ＋0.34 °C/−0.38 °C inaccuracy self-biased CMOS temperature sensor at sub-thermal drain voltage

Lei,

Zeng

2024

AEU - International Journal of Electronics and Communications

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An 11 nW, ＋0.34 °C/−0.38 °C inaccuracy self-biased CMOS temperature sensor at sub-thermal drain voltage

Lei,

Zeng

2024

AEU - International Journal of Electronics and Communications

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Ultra Low Power Event-Driven Sensor Interfaces

Harpe

Shen

et al. 2023

2023 9th International Workshop on Advances in Sensors and Interfaces (IWASI)

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published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User

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An Area-Efficient Smart Temperature Sensor Based on a Fully Current Processing Error-Feedback Noise-Shaping SAR ADC in 180-nm CMOS

Aprile,

Folz,

Gardino

et al. 2024

IEEE J. Solid-State Circuits

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This article presents a bipolar junction transistor (BJT)-based smart temperature sensor employing a noise-shaping successive-approximation-register (SAR) analog-to-digital converter (ADC). This approach, never explored before within a temperature sensing system, was chosen to exploit the low energy/conversion benefit peculiar to SAR-based solutions while overcoming their quantization-dominated resolution with an error-feedback technique. In addition, the system features a complete current-mode architecture enabling op-amp less signal processing and resulting in a highly compact design. Developed and fabricated in a standard 180-nm CMOS process, the sensor exhibits an active area of 0.057 mm 2 and draws a 34-µA total current from a 1.8-V supply. Experimental results in the −50 °C to 110 °C sensing range demonstrate a 92-mK resolution in a conversion time of 80 µs.

show abstract

A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections

Cited by 4 publications

References 7 publications

An 11 nW, ＋0.34 °C/−0.38 °C inaccuracy self-biased CMOS temperature sensor at sub-thermal drain voltage

An 11 nW, ＋0.34 °C/−0.38 °C inaccuracy self-biased CMOS temperature sensor at sub-thermal drain voltage

Ultra Low Power Event-Driven Sensor Interfaces

An Area-Efficient Smart Temperature Sensor Based on a Fully Current Processing Error-Feedback Noise-Shaping SAR ADC in 180-nm CMOS

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