A 2-million-pixel CCD image sensor overlaid with an amorphous silicon photoconversion layer

Manabe, Shiro; Mastunaga, Yosiyuki; Furukawa, Akihiko; Yano, K.; Endo, Yukio; Miyagawa, Ryohei; Iida, Yoshihiro; Egawa, Y.; Shibata, H.; Nozaki, Hidetoshi; Sakuma, Naoko; Harada, Nozomu

doi:10.1109/16.119012

Cited by 32 publications

(5 citation statements)

References 8 publications

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“…Of course, advanced process technologies might shift these limits. For example, the application of extra photo-conversion layers [39] could help to overcome the problem of small fill-factors. Nevertheless, there is a limit, and careful considerations should be given to distribute the computational architecture onto multiple chips.…”

Section: Discussionmentioning

confidence: 99%

Analog VLSI Focal-Plane Array With Dynamic Connections for the Estimation of Piecewise-Smooth Optical Flow

Stocker

2004

IEEE Trans. Circuits Syst. I

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An analog very large-scale integrated (aVLSI) sensor is presented that is capable of estimating optical flow while detecting and preserving motion discontinuities. The sensor's architecture is composed of two recurrently connected networks. The units in the first network (the optical-flow network) collectively estimate two-dimensional optical flow, where the strength of their nearest-neighbor coupling determines the degree of motion integration. While the coupling strengths in our previous implementations were globally set and adjusted by the operator, they are now dynamically and locally controlled by a second on-chip network (the motion-discontinuity network). The coupling strengths are set such that visual motion integration is inhibited across image locations that are likely to represent motion boundaries. Results of a prototype sensor illustrate the potential of the approach and its functionality under real-world conditions.

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Section: Discussionmentioning

confidence: 99%

Analog VLSI Focal-Plane Array With Dynamic Connections for the Estimation of Piecewise-Smooth Optical Flow

Stocker

2004

IEEE Trans. Circuits Syst. I

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“…The spectral sensitivity extended approximately between 400 and 720 nm after which the spectral sensitivity decreased abruptly. The quantum yield of the a-Si:H layer had the highest values between 0.6 and 0.8 in the 450-680 nm wavelength range, with the peak located at around 680 nm, corresponding to the bandgap of the a-Si:H. This imaging array achieved a high sensitivity of 210 nA/lÂ, high resolution of 1,000 TV lines, and a wide dynamic range of 72 dB [120]. Nevertheless, despite its innovative usage of a-Si:H in a functional imaging array, the pixels in this realization were clearly not performing any color sensing.…”

Section: Thin Film Color Sensorsmentioning

confidence: 96%

“…The combination of such a photoconductive array with a spatial light modulator then enabled a flexible analog processing module [118]. A much more intricate design was that of a two-million-pixel CCD image sensor with an overlaid a-Si:H photoconversion layer [120]. It is noteworthy to highlight that in this case, the a-Si:H layer was not patterned so that no independent regions were isolated or defined for each pixel, since the lateral diffusion of charges photogenerated in the layer was reported to be negligible because of the intrinsic very high resistivity of the a-Si:H layer.…”

Section: Thin Film Color Sensorsmentioning

confidence: 99%

Color Sensors and Their Applications

Puiu

2012

Springer Series on Chemical Sensors and Biosensors

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This chapter intends to provide an introduction to and a very brief summary of the principal categories of color sensors and of their applications, both relatively little known to the general public.First, an introduction describes the background of the topic(s) and the overall context. The main differences between two major but complementary techniques, colorimetry and spectrometry, will be presented here, as well as a quick summary of the scientific, technical, and industrial applications of color sensing. The second section will summarize the basic operational principles and architectures of color sensors realized in silicon. Although stand-alone detectors will also be described and discussed, the main focus will be on solid-state microsensors which can ideally be monolithically integrated together with signal processing circuits onto the same chip as "smart sensors" or intelligent microsystems. First, sensors realized only in monocrystalline silicon are summarized, followed then by those fabricated in other materials, with amorphous silicon and its alloys as the key players in this latter category.Finally, the chapter ends with the sections devoted to Conclusions and References. This chapter presents only a few of the most relevant aspects related to color sensors and examples of their practical applications. It is, in fact, an extensively abbreviated version of a much more detailed and exhaustive review dedicated to both color sensing and microspectrometry, and which is presently in preparation for future submission to Springer Verlag.

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“…The combination of a thin-film color detector with amorphous-, polycrystalline-, or crystalline-silicon read-out electronics can be used to produce color sensitive sensor arrays, which are already realized for black and white sensors. [8][9][10][11] Since the RGB signal in those devices is detected at the same spatial detector position, a high area fill factor can be achieved and the colormoiré effect can be prevented. Therefore, each detector is read out sequentially, which requires a fast transient behavior.…”

Section: Introductionmentioning

confidence: 99%

Transient photocurrent response of three-color detectors based on amorphous silicon

Stannowski¹,

Stiebig²,

Knipp³

et al. 1999

Journal of Applied Physics

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Color detectors based on multilayers of amorphous-silicon alloys facilitate the detection of the three fundamental components of visible light in one single pixel of a sensor array. In order to achieve sensitivity for the blue, green, and red components of light, three different bias voltages are applied to the device. By switching them sequentially the detector is read out. n-i-p-i-i-n structures with a controlled band gap and mobility-lifetime product exhibit excellent stationary properties, namely: good color separation and have dynamic behaviors above 95 dB. Besides the stationary behavior the transient response of a color detector is a further optimization criterion. The experimentally found transient photocurrent response after switching on monochromatic light at different applied bias voltages showed reasonable delay times in the range of tens of milliseconds before reaching steady state. Numerical simulations have been carried out which reproduce this characteristic behavior and facilitate a study of time dependent processes within the device, such as charge transport and storage in localized states. The delay times can be explained by the recharging of electrical defect states in the amorphous material. Consequently, the electrical potential within the device changes, which remarkably affects the carrier transport. Based on these results optimization criteria for the transient behavior of the color detectors are discussed.

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A 2-million-pixel CCD image sensor overlaid with an amorphous silicon photoconversion layer

Cited by 32 publications

References 8 publications

Analog VLSI Focal-Plane Array With Dynamic Connections for the Estimation of Piecewise-Smooth Optical Flow

Analog VLSI Focal-Plane Array With Dynamic Connections for the Estimation of Piecewise-Smooth Optical Flow

Color Sensors and Their Applications

Transient photocurrent response of three-color detectors based on amorphous silicon

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