2015
DOI: 10.1109/tmtt.2015.2453156
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A 2-W W-Band GaN Traveling-Wave Amplifier With 25-GHz Bandwidth

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Cited by 66 publications
(21 citation statements)
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“…For instance, Fig. 31 shows a traveling-wave three-stage GaN amplifier presented by Quinstar in [167] achieves more than 33 dBm power and at least 16 dB gain from 75 to 100 GHz. On the other hand, in [168], a broadband radial stub is deployed in a W-band PA using a 100 nm Fraunhofer IAF GaN HEMT process to cover the completed W-band from 70 to 110 GHz.…”
Section: W-band (75-110 Ghz)mentioning
confidence: 99%
“…For instance, Fig. 31 shows a traveling-wave three-stage GaN amplifier presented by Quinstar in [167] achieves more than 33 dBm power and at least 16 dB gain from 75 to 100 GHz. On the other hand, in [168], a broadband radial stub is deployed in a W-band PA using a 100 nm Fraunhofer IAF GaN HEMT process to cover the completed W-band from 70 to 110 GHz.…”
Section: W-band (75-110 Ghz)mentioning
confidence: 99%
“…State of the art high power solid-state MMIC processes could provide power amplifiers with saturated power in the range of 30dBm [5] [6]. On the contrary, no amplifier with a saturated power level in the range of 40W and sufficient bandwidth is available today for wireless communication systems at millimeter waves.…”
Section: B Capacity and Coverage Scenario At W-bandmentioning
confidence: 99%
“…The availability of electronic devices at W-band (92 -95 GHz) is still limited. GaN SSPAs are recently presented with output power in the range of 1 W [8,9]. This power level is not sufficient for enabling the coverage of wide area corresponding to a sector with a wide angle, as required in the three tiers architecture (Fig.…”
Section: Millimeter Wave Front Endmentioning
confidence: 99%