A 200 mm SiGe-HBT technology for wireless and mixed-signal applications

Harame, D.L.; Schonenberg, K.; Gilbert, M.; Nguyen-Ngoc, D.; Malinowski, J.; Jeng, S. J.; Meyerson, B.S.; Cressler, John D.; Groves, R.; Berg, G.D.; Tallman, K.; Stein, K.; Hueckel, G.; Kermarrec, C.; Tice, T.; Fitzgibbons, G.; Walter, K.; Colavito, D.; Houghton, Thomas; Greco, Nunzio; Kebede, Tewelgn; Cunningham, B.; Subbanna, S.; Comfort, J.H.; Crabbé, E.F.

doi:10.1109/iedm.1994.383374

Cited by 22 publications

(6 citation statements)

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“…This will eventually lead to lower costs, higher levels of integration, and the ability to include both the sensing and actuating components with the signal processing and RF circuitry. Recent improvements in Si/SiGe heterojunction bipolar transistors (HBT) have pushed their cutoff frequencies to beyond 200 GHz [3,5]. In addition, the state-of-the-art bulk CMOS technology can offer a viable option for RF designs into the 2 GHz range [4].…”

Section: Introductionmentioning

confidence: 99%

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A generic micromachined silicon platform for high-performance RF passive components

Ziaie

Najafi

2000

J. Micromech. Microeng.

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This paper describes the development of a micromachined silicon platform fabricated using the dissolved wafer process that supports: (1) high self-resonance frequency and quality factor inductors suspended on a dielectric membrane, (2) low-loss thin-film capacitors, and (3) polysilicon resistors. The process uses deep boron diffusion to create silicon anchors, which support a stress compensated dielectric membrane. A thick resist mold is used to gold electroplate the inductor, top capacitor plate, and bonding pads. This platform can be used to build miniature high-performance transceivers or other RF subsystems using either hybrid-attached surface-mount components or flip-chip bonded RF circuits. Using this technique, a Colpitts transmitter with a five-turn dielectric suspended inductor was designed and fabricated. The transmitter oscillates in the frequency band of 275-375 MHz, consumes 200 µA when operated continuously and 100 µA when amplitude modulated (on-off keying) at a rate of 1 Mbps (50% duty cycle).

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Section: Introductionmentioning

confidence: 99%

“…Recent improvements in Si/SiGe heterojunction bipolar transistors (HBT) have pushed their cutoff frequencies to beyond 200 GHz [3,5]. In addition, the state-of-the-art bulk CMOS technology can offer a viable option for RF designs into the 2 GHz range [4].…”

Section: Introductionmentioning

confidence: 99%

A generic micromachined silicon platform for high-performance RF passive components

Ziaie

Najafi

2000

J. Micromech. Microeng.

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“…In some cases there are attempts to tightly integrate advanced heterojunction devices (i.e. SiGe HBTs) using mainstream CMOS technology [1]. Alternatives that use silicon substrates as "glue" technology represent ongoing experimentation moving towards the regime of truly heterogeneous technology.…”

Section: Introductionmentioning

confidence: 99%

Hierarchical Process Simulation for Nano‐Electronics

Dutton

Kan

1998

VLSI Design

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“…The last few years have seen considerable advancement in SiGe technology due to the potential for achieving device speeds greater than those obtained with silicon only devices. [1][2][3] Si 1Ϫx Ge x heterostructures have found applications in fabricating heterojunction bipolar transistors (HBTs), [4][5][6][7][8][9][10][11][12][13][14][15][16][17] and in channel engineering, 18 as gate material, 19 and in contact resistance applications 20 in insulated gate field effect transistors (IGFETs). In order to fabricate such devices, excellent control over the morphology and composition of epitaxial Si 1Ϫx Ge x films is mandatory.…”

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confidence: 99%

Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: Experimental Data: II. Morphology and Composition as a Function of Deposition Parameters

Soman

Reisman

Temple

et al. 2000

J. Electrochem. Soc.

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The last few years have seen considerable advancement in SiGe technology due to the potential for achieving device speeds greater than those obtained with silicon only devices. 1-3 Si 1Ϫx Ge x heterostructures have found applications in fabricating heterojunction bipolar transistors (HBTs), 4-17 and in channel engineering, 18 as gate material, 19 and in contact resistance applications 20 in insulated gate field effect transistors (IGFETs). In order to fabricate such devices, excellent control over the morphology and composition of epitaxial Si 1Ϫx Ge x films is mandatory. For Si 1Ϫx Ge x films to be useful, they should be microscopically smooth and exhibit good crystalline quality.Si and Ge are completely miscible over the entire composition range. 5 Hence, they can be intermixed to form a stable alloy, Si 1Ϫx Ge x , where x represents the mole fraction of Ge in the alloy. However, the lattice constant of Si is about 4.2% smaller than that of Ge, leading to a number of practical difficulties in deposition of SiGe alloys for use in semiconductor applications. 21 In order to retain crystal perfection at low Ge compositions, e.g., less than 30 mol %, the Si 1Ϫx Ge x films need to adopt the smaller lattice constant of the host material without relaxing. This accommodation, known as strained layer epitaxy, induces compressive strain in the overlying film. Strained layer epitaxial films are stable only under a narrow range of conditions, dependent on the film's effective strain, which increases with increasing Ge composition and film thickness, and also depends on the temperature of subsequent treatment. Films with a high Ge content must be deposited at low temperatures to prevent relaxation, and they must be very thin if they are to be stable. 22,23 Band structure, optical properties, and the carrier mobility are determined by the homogeneous strain in the lattice structure. The homogeneous strain is, therefore, a key factor in determining the usefulness of the layers. The strain can relax by forming crystalline defects and/or three-dimensional growth, which degrade the electrical characteristics.The film thickness, t m , at which transition from smooth to rough morphology takes place, depends on the mole fraction of Ge in the Si 1Ϫx Ge x films and the temperature of deposition. The choice of temperature for deposition of Si 1Ϫx Ge x films requires the balancing of two competing temperature requirements. The atoms should have sufficient mobility to achieve good quality epitaxy. The mobility of atoms increases with increase in temperature. However, the transition from smooth to rough surface morphology, which tends to degrade morphological quality and which is needed for current device applications, is enhanced at a given film thickness at higher growth temperatures.In this paper, we investigate the effect of processing conditions such as deposition temperature, input gas phase composition, flow rates, and deposition time, on the resulting Si 1Ϫx Ge x film composition, morphology, and crystalline perfection, using the ...

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A 200 mm SiGe-HBT technology for wireless and mixed-signal applications

Cited by 22 publications

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A generic micromachined silicon platform for high-performance RF passive components

A generic micromachined silicon platform for high-performance RF passive components

Hierarchical Process Simulation for Nano‐Electronics

Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: Experimental Data: II. Morphology and Composition as a Function of Deposition Parameters

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