A 20m/spl Omega/cm/sup 2/ 600 V-class superjunction MOSFET

Saito,; Omura,; Aida,; Koduki,; Izumisawa,; Yoshioka,; Ogura,

doi:10.1109/wct.2004.239755

Cited by 19 publications

(14 citation statements)

References 4 publications

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“…The resulting SJ sustaining layer is, therefore, unbalanced. It is well known that an unbalanced charge reduces the voltage sustaining capability of SJ devices [14], [18], [19]. In fact, the unbalanced charge breaks the symmetry of the electric field in the device and exalts one peak on the electric field with respect to the other.…”

Section: A Superposition Conceptmentioning

confidence: 99%

“…These models are of utmost importance since they provide a fast and reliable way to devise the optimal performance of an SJ structure. However, most of the previous work assumes an ideal charge balance between P and N pillars, while it is well known that a tiny imbalance in the charge significantly affects the BV [14], [18], [19]. Since charge imbalance (C.I.)…”

Section: Introductionmentioning

confidence: 99%

“…Extensive 2-D numerical simulations confirm the validity of the proposed model. The analytical results are also compared with the experimental data from [19] to verify its accuracy.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices

Wang

Napoli

Udrea

2009

IEEE Trans. Electron Devices

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An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponentialmodel is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results

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Section: A Superposition Conceptmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices

Wang

Napoli

Udrea

2009

IEEE Trans. Electron Devices

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“…voltage application field, particularly in the voltage range of less than 900 V. The difficulty of the process to form the narrow and highly doped P/N Pillars and the hardness of the reverse-recovery of the body-diode are two key issues for the SJ MOSFET [3,4]. Then the Semi-SJ concept with an n-type Bottom Assist Layer (n-BAL) which is connected in series to the bottom of the SJ structure is proposed to overcome the issues [5][6][7][8]. From the aspect of structure, the Semi-SJ is composed of SJ part and n-BAL part, thus the breakdown voltage BV for the Semi-SJ is the sum of the BV SJ and the BV n-BAL , the onstate resistance R on,sp for the Semi-SJ is the sum of the R SJ and the R n-BAL .…”

Section: Introductionmentioning

confidence: 99%

A semi-superjunction MOSFET with P-type Bottom Assist Layer

Chen

Wang

Liu

et al. 2015

Superlattices and Microstructures

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“…[1,2]. The SJ-MOSFET needs a high aspect ratio p/n column structure to obtain the low Ron [3][4][5]. In previous work, we have proposed a new trench filling process using an anisotropic epitaxial growth to fabricate the high aspect ratio p/n column structure [3].…”

Section: Introductionmentioning

confidence: 99%

200V Trench Filling Type Super Junction MOSFET with Orthogonal Gate Structure

Shibata

Noda

Yamauchi

et al. 2007

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

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A Super Junction (SJ) MOSFET which trench gates are orthogonal to p/n columns was fabricated to improve a tradeoff relationship between specific on-resistance (Ron) and gate-drain charge (Qgd). In this structure, a trench gate pitch and a p/n column pitch can be independently controlled. We experimentally demonstrated a dependence of Ron and Qgd on the orthogonal gate pitch. The experimental value of Ron*Qgd decreased with the increase of gate pitch, and this value of 0.166QnC was achieved at the trench gate pitch of 10ptm and the p/n column pitch of 2.7ptm. This figure-ofmerits (FOMs) value is about 36% lower than that of the previous reported for 200V SJ-MOSFETs. Moreover, the unclamped inductive switching (UIS) endurance of this SJ-MOSFET was 24mJ/mm2 and this result is 1.3 times stronger than that of conventional trench MOSFET.

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A 20m/spl Omega/cm/sup 2/ 600 V-class superjunction MOSFET

Cited by 19 publications

References 4 publications

Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices

Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices

A semi-superjunction MOSFET with P-type Bottom Assist Layer

200V Trench Filling Type Super Junction MOSFET with Orthogonal Gate Structure

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