2021
DOI: 10.1109/jssc.2021.3102602
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A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS

Abstract: In this article, a 22.9-38.2-GHz dual-path noisecanceling low noise amplifier (LNA) is proposed, which can achieve a low noise figure (NF) by reducing the noise of both paths. Such LNA consists of one common gate (CG) amplifier with one three-stage transformer, one resistive feedback common-source (CS) amplifier, and two amplitude-adjusting amplifiers. The three-stage transformer is used in the CG amplifier to provide gain-boosting, noise-reducing, and wideband inter-stage matching operation, simultaneously. M… Show more

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Cited by 39 publications
(7 citation statements)
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“…Figure 3 presents the NF versus the gain of current state-of-the-art GaAs [111], [112], GaN [111], [112], SiGe [131], [132], [133], [134], [135], [136], [137], [138], and Si [130], [139], [140], [141], [142], [143], [144], [145] LNAs The PAE versus the P sat of current state-of-the-art GaN [106], [107], [108], [109], [110], [111], [112], GaN [111], [116], Si [117], [118], [119], [120], [121], [122], [123], [124], and SiGe PAs [125], [126], [127], [128], [129] in the Ku/Ka frequency bands.…”
Section: Lnasmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 3 presents the NF versus the gain of current state-of-the-art GaAs [111], [112], GaN [111], [112], SiGe [131], [132], [133], [134], [135], [136], [137], [138], and Si [130], [139], [140], [141], [142], [143], [144], [145] LNAs The PAE versus the P sat of current state-of-the-art GaN [106], [107], [108], [109], [110], [111], [112], GaN [111], [116], Si [117], [118], [119], [120], [121], [122], [123], [124], and SiGe PAs [125], [126], [127], [128], [129] in the Ku/Ka frequency bands.…”
Section: Lnasmentioning
confidence: 99%
“…SiGe LNAs present an NF in the 2-3-dB range in the Ka-/Ku-bands, with gains that span the 15-30-dB range [131], [132], [133], [134], [135], [136], [137], [138]. Sibased LNAs present more modest gain levels in the 12-20-dB range but show NFs close to those of GaAs (i.e., nearly 1 dB) up to 3.5 dB [130], [139], [140], [141], [142], [143], [144], [145].…”
Section: Lnasmentioning
confidence: 99%
“…Such inphase noise is generated from the source noise of M 1 , which is amplified by the auxiliary path before canceling. By properly adjusting the gains of M 3 and M 4 , the noise-canceling ratio is improved [48]. In the proposed NCLNA, the gain and operation bandwidth is determined by the performance of the main path.…”
Section: B Wideband Nclna and Rfvgamentioning
confidence: 99%
“…The models in Section 4.3 are now used to develop a measure of link rate coverage for OtI scenarios with "traditional" or Low-e glass. Table 5 defines typical parameters for the 28 GHz BS and UE representative of recent advances in state-of-the art mmWave hardware [43][44][45][46][47]. We select conservative values for these parameters to reduce the possibility of overestimating data rates, and we include an additional 5 dB of losses in 𝑁 𝐹 .…”
Section: Glass-dependent Oti Data Ratesmentioning
confidence: 99%