A 22-dBm 24-GHz power amplifier using 0.18-µm CMOS technology

Huang, P.; Juo, J.; Tsai, Z.; Lin, K.; Wang, H.

doi:10.1109/mwsym.2010.5516923

Cited by 2 publications

(4 citation statements)

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“…In this paper, small inductors and cross-coupled pairs are adopted in the proposed PA circuit for gain and PAE improvement. By using these techniques, the power performances of this work can be better than that of the recently published 0.18-µm CMOS PAs [3,4,5,6]. Fig.…”

Section: Introductionmentioning

confidence: 85%

“…For wireless CMOS transceivers, the power amplifier is always one of the challenging building blocks [1,3,4,5,6,7,8]. The design difficulties for a CMOS power amplifier are low saturated output power (Psat), low output 1-dB compression point (OP 1 dB ), low power-added efficiency (PAE), and low power gain.…”

Section: Introductionmentioning

confidence: 99%

“…The design difficulties for a CMOS power amplifier are low saturated output power (Psat), low output 1-dB compression point (OP 1 dB ), low power-added efficiency (PAE), and low power gain. In order to alleviate these difficulties and provide highdata-rate transmission in 24-GHz industrial, scientific, and medical (ISM) band [2], research on the development of K-band CMOS power amplifier has accelerated [3,4,5,6].…”

Section: Introductionmentioning

confidence: 99%

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Performance enhancement techniques for CMOS power amplifier

Wang

2011

IEICE Electron. Express

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Abstract:In this paper, performance enhancement techniques for CMOS power amplifier (PA) are proposed. First, a small inductor is inserted between the common-gate transistors of a triple-cascode stage (PA unit) for improving the power-added efficiency (PAE). Moreover, cross-coupled pairs are utilized in the PA circuit to raise the gain. Furthermore, these additional cross-coupled transistors can boost the PAE and saturated output power (Psat) of the PA. Based on these methods, a K-band PA has been designed in 0.18-µm RF CMOS process. Simulated results confirm these methods applied to this PA can effectively improve the performance in terms of gain, Psat, and PAE.

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Section: Introductionmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Performance enhancement techniques for CMOS power amplifier

Wang

2011

IEICE Electron. Express

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“…K-band applications in wireless communication including point to point communications, license-free ISM applications, and automotive radars [4]. A number of K-band CMOS PAs have been reported [9]- [15], all of them with fixed bias and PAE degrading proportionally to the power back-off.…”

Section: Introductionmentioning

confidence: 99%

K-band CMOS power amplifier with adaptive bias for enhancement in back-off efficiency

Kuo

Kao

Kuo

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

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A K-band power amplifier that dynamically adjusts the dc consumption based on the output power is presented. Compared with a fixed-bias PA that consumes a constant dc power of 265 mW, the proposed PA saves 157 mW at quiescent state and 88 mW when operated at P 1dB 6-dB back-off, and the OP 1dB of the PA is also extended. This is the first CMOS PA with effective enhancement in back-off efficiency near MMW region.

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A 22-dBm 24-GHz power amplifier using 0.18-µm CMOS technology

Cited by 2 publications

References 0 publications

Performance enhancement techniques for CMOS power amplifier

Performance enhancement techniques for CMOS power amplifier

K-band CMOS power amplifier with adaptive bias for enhancement in back-off efficiency

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