A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

Shopov, Stefan; Balteanu, Andreea; Hasch, Jürgen; Chevalier, P.; Cathelin, Andreia; Voinigescu, S.P.

doi:10.1109/jssc.2016.2560198

Cited by 53 publications

(10 citation statements)

References 21 publications

(28 reference statements)

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“…In the D-Band signal source design, the output signal power of VCO is preferred to be transferred to the multiplier chains as much as possible to maximize the output power, with only a small amount of power is used to drive the frequency divider chains. Millimeter wave frequency dividers are usually implemented by dynamic topology, because dynamic frequency divider is easier to operate at higher frequency without latching mechanism [2]. However, the input sensitivity of dynamic frequency divider is relatively poor, which is unacceptable in our design.…”

Section: Appendix Cmentioning

confidence: 99%

A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

Zhou

Yan

Peng

et al. 2020

Sci. China Inf. Sci.

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A 143.2-168.8 GHz signal source with 5.6 dBm peak output power at 159 GHz and corresponding-94 dBc/Hz @ 1 MHz phase noise is reported. The circuit includes a 26 GHz Colpitts topology voltagecontrolled-oscillator and a static divide-by-four chains, an E-Band frequency tripler, a balanced D-Band frequency doubler. Through systematically analyzing the influence of input power level (detected by power detector) and base bias voltage on the output power of active frequency doubler, implementation of the D-Band doubler has been carefully designed to maximize output power of the signal source. Besides, by adopting high pass matching network in frequency tripler and frequency doubler design, the signal source exhibits an excellent unwanted harmonics suppression of over 30 dBc in the whole output tuning range. The total chip area is 2.4 mm 2 and the whole DC power consumption is 379 mW, which resulting in a peak DC-to-RF efficiency of 1.14 %. Compared with other D-Band signal sources, this signal source achieves the best phase noise (with divider chain), very competitive tuning bandwidth and the highest output power while using silicon-based processes with the lowest cutoff f T frequency.

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Section: Appendix Cmentioning

confidence: 99%

A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

Zhou

Yan

Peng

et al. 2020

Sci. China Inf. Sci.

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show abstract

“…Recent reported results, from 12 W to 10 mW at 0.215-0.92 THz bands, have been reviewed where the e±ciencies are between 0.01% and 5.1%. Some of the reported results [29][30][31][32][33][34][35][36][37] are given in Table 2 and plotted in Fig. 2.…”

Section: Heterojunction Bipolar Transistormentioning

confidence: 99%

Comparative Efficiency and Power Assessment of Optical Photoconductive Material-Based Terahertz Sources for Wireless Communication Systems

Yazgan

Jofre

Romeu

2018

J CIRCUIT SYST COMP

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Terahertz band has recently attracted the attention of the communication society due to its huge bandwidth and very high-speed wireless communications capability. It has been utilized in a variety of disciplines including physics, biology and astronomy for years; and the main concerns have always been obtaining highly efficient and high-power terahertz sources. Today, these problems are still the most important issues in establishing an operable wireless terahertz communication link. In this paper, recent studies in the field of terahertz source design are investigated based on the terahertz output power and efficiency. Solid-state sources and optical sources were comparatively reviewed with optical photoconductive material (OPM)-based methods which are combined with the terahertz antennas in the design phase generally. For wireless communication, the most suitable frequencies are between 0.3[Formula: see text]THz and 1[Formula: see text]THz due to the attenuation profile of the atmosphere. For this reason, based on the recently published studies, it has been observed that OPM and resonant tunneling diode-based sources are the most promising terahertz sources in terms of efficiency and power. Key issues and the main problems of terahertz photoconductive antennas which are the base of OPM method were also discussed in this paper.

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“…Although the push-push frequency doubler architecture allows for higher power efficiency [2], it requires a balun at the output in order to drive double-balanced Gilbert cell mixers. The balun phase and gain imbalance are translated into common mode excitation for the mixer which degrades the LO to RF isolation, this is crucial especially for direct conversion transmitters.…”

Section: Circuit Designmentioning

confidence: 99%

“…Different solutions have been proposed to realize such circuits. Fundamental frequency oscillators at 240 GHz [1] or at 120 GHz followed by a frequency doubler [2], although being power-efficient solutions, they are accompanied by constrains and tradeoffs concerning the phase noise due to the degraded quality factor of varactors at such frequencies. Also, in coherent systems when LO synchronization is required, the design of a phase locked loops divider (PLL) becomes a challenge.…”

Section: Introductionmentioning

confidence: 99%

A 216–256 GHz fully differential frequency multiplier-by-8 chain with 0 dBm output power

Eissa

Malignaggi

et al. 2018

Int. J. Microw. Wireless Technol.

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This work presents a fully differential wideband and low power 240 GHz multiplier-by-8 chain, manufactured in IHP's 130 nm SiGe:C BiCMOS technology with fT/fmax = 300/500 GHz. A single ended 30 GHz input signal is multiplied by 8 using Gilbert cell-based quadrupler and doubler, and then amplified with a wideband differential 3-stage cascode amplifier. To achieve wide bandwidth and optimize for power consumption, the power budget has been designed in order to operate the frequency multipliers and the output amplifier in saturation. With this architecture the presented circuit achieves a 3 dB bandwidth of 40 GHz, meaning a relative 3 dB bandwidth of 17%, and a peak saturated output power of 0 dBm. Harmonic rejections better than 25 dB were measured for the 5th, 6th, and 7th harmonics. It dissipates 255 mW from 3 V supply which results in drain efficiency of 0.4%, while occupying 1.2 mm2. With these characteristics the presented circuit suits very well as a frequency multiplier chain for driving balanced mixers in 240 GHz transceivers for radar, communication, and sensing applications.

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A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

Cited by 53 publications

References 21 publications

A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

Comparative Efficiency and Power Assessment of Optical Photoconductive Material-Based Terahertz Sources for Wireless Communication Systems

A 216–256 GHz fully differential frequency multiplier-by-8 chain with 0 dBm output power

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