2016
DOI: 10.1109/jlt.2015.2494060
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A 25 Gb/s 3D-Integrated CMOS/Silicon-Photonic Receiver for Low-Power High-Sensitivity Optical Communication

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Cited by 66 publications
(40 citation statements)
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“…To understand the energies involved in receiver circuits, consider, for example, a recent low-energy photodiode and receiver design [112]. The photodiode has ~ 8fF or less capacitance and the hybrid (solder-bump) packaging technique adds about another 25 fF for a total capacitance of ~ 30fF.…”
Section: A Receiver Circuit Energiesmentioning
confidence: 99%
See 2 more Smart Citations
“…To understand the energies involved in receiver circuits, consider, for example, a recent low-energy photodiode and receiver design [112]. The photodiode has ~ 8fF or less capacitance and the hybrid (solder-bump) packaging technique adds about another 25 fF for a total capacitance of ~ 30fF.…”
Section: A Receiver Circuit Energiesmentioning
confidence: 99%
“…This example gives a receiver circuit operating at 170 fJ/bit at 25 Gb/s with -14.9 dBm noise-limited sensitivity. Such a receiver circuit energy per bit is impressively low; other circuits (see [112] for comparisons) can dissipate as much as several pJ/bit.…”
Section: A Receiver Circuit Energiesmentioning
confidence: 99%
See 1 more Smart Citation
“…Transimpedance amplifiers designed for optical interconnects operate at the ∼ 100 fJ range [59,26], while ADCs in the few-pJ/sample regime are available [60] and simple arithmetic (for the activation function) can be performed at the pJ scale [15,16,17]. Modulators in this energy range are standard [56,57,59]. Thus a reasonable near-term estimate would be few-pJ/neuron; this figure is divided by the number of inputs per neuron to give the energy per MAC (solid green curve in Fig.…”
Section: Energy Budgetmentioning
confidence: 99%
“…SOI wafers with a 0.22 µm silicon guiding layer and 2 µm BOX is the pseudo standard used for SOI-based silicon photonics. However recently thicker silicon layers of 0.31 µm [25] and 0.4 µm [26] are also getting prominence due to the ease of heterogeneous III-V laser integration on these waveguide circuits. The high index contrast of about 2 between the guiding silicon layer (n∼3.5) and the BOX (n∼1.45) allows for a tight bending radius of 5 µm (for 0.45 µm wide strip waveguides operating at 1.55 µm).…”
Section: Silicon Photonics Platformsmentioning
confidence: 99%