A 270 – 330 GHz Vector Modulator Phase Shifter in 130nm SiGe BiCMOS

Abstract

This paper presents a wideband vector modulator phase shifter measured at frequency bands reaching and ever surpassing the ft of the technology for 6G beamforming for extremely high data rate applications. The circuit is designed based on 130nm SiGe BiCMOS technology with ft / fmax of 300/500 GHz. The chip occupies a die area of 0.53×0.48 mm 2 and offers a total 360° of phase variation with a pad-to-pad gain of -10dB over its 270 -330 GHz operational ranges.

An E-band Bidirectional PALNA in 0.13 µm SiGe BiCMOS Technology

“…In a phased array system with a large number of elements, a smaller phase shifter makes the phased array system smaller. A vector modulator (VM) can be used to perform a phase shift function with the benefit of both gain and phase control [30,54]. VM phase shifters require in-phase (I) and quadrature (Q) signals.…”