A 28-GHz-Band GaN HEMT MMIC Doherty Power Amplifier Designed by Load Resistance Division Adjustment

Ishikawa, Ryo; Seshimo, Takuya; Takayama, Yoichiro; Honjo, Kazuhiko

doi:10.23919/eumic50153.2022.9783948

Cited by 10 publications

(2 citation statements)

References 13 publications

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“…Furthermore, the PAE is strongly affected by the complexity in terms of presence/absence of driver stages, and thus by the gain. Single-stage DPAs [28] can achieve a remarkable efficiency even at these frequencies, but inevitably feature a very limited gain.…”

Section: A Continuous Wave (Cw) Measurementsmentioning

confidence: 99%

3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz

Piacibello

Camarchia

Colantonio

et al. 2023

IEEE Trans. Microwave Theory Techn.

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This article presents the design strategy and the implementation of a three-way Doherty power amplifier (DPA3W) to enhance the efficiency at deep power back-off. Theoretical design equations are derived, based on which design charts are drawn to explore the available design space, accounting for practical constraints related to the available technology and selected application. The proposed design strategy is demonstrated by the design, fabrication and experimental characterization of a three-way multistage Doherty amplifier optimized for efficiency peaks at 6 and 12 dB back-off. The amplifier is realized on the WIN Semiconductors 150 nm GaN-SiC high-electron-mobility transistor (HEMT) monolithic process at 28 GHz, targeting 5G applications. The prototype achieves saturated output power in excess of 34 dBm and power added efficiency of the order of 15% from 6 to 12 dB back-off, demonstrating competitive performance and a good agreement between simulations and measurements, thus validating the approach.

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Section: A Continuous Wave (Cw) Measurementsmentioning

confidence: 99%

3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz

Piacibello

Camarchia

Colantonio

et al. 2023

IEEE Trans. Microwave Theory Techn.

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“…high-power electronics applications [1][2][3][4], largely because of their enabling physical properties that demonstrate high-level performances in electron mobility, threshold breakdown field, saturation velocity, operating temperature, and carrier density of two-dimensional electron gas [5]. For wireless communications [6], radar sensing [7], and satellite broadcasting [8] applications, high-electron-mobility transistors (HEMTs) based on AlGaN/GaN have been under intense research mostly because of their superior highfrequency device characteristics.…”

Section: Introductionmentioning

confidence: 99%

Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

Chang

Panda

Weng

et al. 2023

Semicond. Sci. Technol.

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Ti/TiN/Cu is established to be an enabling alternative to the better-known Au-based ohmic contact metals such as Ti/Al/Ni/Au. The Cu-based option delivers lower contact resistance and smoother surface morphology and is proven to be compatible with AlGaN/GaN HEMTs device processing. The TiN layer serves as an effective Cu-diffusion barrier as no detectable Cu-diffusion was observed when subjected to thermal treatment up to 600 ℃. There is a tendency of N-diffusion across the Ti/GaN interface near which N-deficiency in the GaN epitaxial layer and formation of a nano-sheath of TiN was found. This ultrathin layer of TiN works to further improve the ohmic performance of the electric contact, as reflected in lowered contact resistivity ρC. It is possible to manufacture the TiN thin films with low sheet resistance at a high deposition rate by adjusting the ratios between argon and nitrogen gas flows during sputtering deposition. Contact resistivity ρC, tested for the AlGaN/GaN HEMT devices fabricated on Si substrate according to the TLM standard were found to be as low as 3.65×10-6 Ω-cm2 (RC = 0.54 Ω-mm). The outcomes benchmark favourably against many reported metal-stacking structures for ohmic contacts. The robustness of surface morphology and interface sharpness against thermal treatments make the established ohmic stack structures suitable for scalable device fabrications.

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Parameterized Surrogate Models of Microstrip Structures for Electromagnetic-Based Power Amplifier Design and Statistical Analysis

Ramella

Zanco

Stefano

et al. 2023

Lecture Notes in Electrical Engineering

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A 28-GHz-Band GaN HEMT MMIC Doherty Power Amplifier Designed by Load Resistance Division Adjustment

Cited by 10 publications

References 13 publications

3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz

3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz

Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

Parameterized Surrogate Models of Microstrip Structures for Electromagnetic-Based Power Amplifier Design and Statistical Analysis

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