A 28V over 300 W GaAs heterojunction FET with dual field-modulating-plates for W-CDMA base stations

Introduction of chirality at C1 position of 1-substituted-3,4-dihydroisoquinoline by its enantioselective reduction: synthesis of chiral 1-substituted-1,2,3,4-tetrahydroisoquinoline – a review

“…Kuriyama et al described the process of converting 1phenyl-DHIQ 51a to 1-phenyl-THIQ 52a by AH (Scheme 17). 38 It is done in presence of a ruthenium-optically active phosphine complex derived from an optically active phosphine.…”

370-W Output Power GaN-FET Amplifier with Low Distortion for W-CDMA Base Stations

“…To date, a GaN-FET amplifier output power performance of over 100W has been reported for W-CDMA base stations [4]- [6]. In terms of high power W-CDMA base-station amplifiers with other semiconductor devices, the long-term progress of high-power GaAs-FET and Si-LDMOS-FET technology and power combining techniques has finally achieved 300-W and 200-W output amplifiers using a pushpull or Doherty configuration, respectively [7]- [9]. Regarding the linearization of W-CDMA base-station amplifier systems, a combination of digital predistortion (DPD) architectures and crest factor reduction (CFR) algorithms have recently been implemented to achieve 3GPP base station linearity specifications while providing high efficiency.…”

“…However, in these DPD linearized W-CDMA amplifiers, memory effects are one of the issues that need to be solved since an intermodulation distortion (IMD) including memory effects has not effectively been compensated even using DPD linearization. Therefore, in order to prove their superiority to GaAs-FET and LDMOS-FET amplifiers [7]- [9], GaN-FET amplifiers for W-CDMA base stations must illustrate not only a high output power of over 300 W delivered from a simple amplifier configuration [6], but also an excellent linearity performance with DPD linearization [4], [5], which is achieved by suppressing memory effects.…”