2021
DOI: 10.3390/math9050465
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A 2D Membrane MEMS Device Model with Fringing Field: Curvature-Dependent Electrostatic Field and Optimal Control

Abstract: An important problem in membrane micro-electric-mechanical-system (MEMS) modeling is the fringing-field phenomenon, of which the main effect consists of force-line deformation of electrostatic field E near the edges of the plates, producing the anomalous deformation of the membrane when external voltage V is applied. In the framework of a 2D circular membrane MEMS, representing the fringing-field effect depending on ?|∇u|2 with the u profile of the membrane, and since strong E produces strong deformation of th… Show more

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Cited by 4 publications
(17 citation statements)
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“…To overcome its mechanical inertia, the applied voltage V must assume values such that the corresponding value of the electrostatic field inside the device can generate an appropriate electrostatic pressure equal to (with , the permittivity of free space). The term can be translated into an equivalent electrostatic force, , computable as [ 1 , 25 , 48 , 61 ] which deflects the membrane, thus achieving a displacement in its center, , equal to (where T is the radial mechanical tension of the membrane when it is at rest) [ 1 , 48 ]. Electrostatically, if the membrane deforms, the field , which depends on the distance between the membrane and the upper disk, results to be locally orthogonal to the tangent line to the membrane at the same point [ 2 ].…”
Section: A Description Of the 2 D Electrostatic Circular-membrane Mems Devicementioning
confidence: 99%
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“…To overcome its mechanical inertia, the applied voltage V must assume values such that the corresponding value of the electrostatic field inside the device can generate an appropriate electrostatic pressure equal to (with , the permittivity of free space). The term can be translated into an equivalent electrostatic force, , computable as [ 1 , 25 , 48 , 61 ] which deflects the membrane, thus achieving a displacement in its center, , equal to (where T is the radial mechanical tension of the membrane when it is at rest) [ 1 , 48 ]. Electrostatically, if the membrane deforms, the field , which depends on the distance between the membrane and the upper disk, results to be locally orthogonal to the tangent line to the membrane at the same point [ 2 ].…”
Section: A Description Of the 2 D Electrostatic Circular-membrane Mems Devicementioning
confidence: 99%
“…Moreover, many researchers are actively engaged in the development of important experimental research works for the development and prototyping of special MEMS such as, for example, circular graphene membrane MEMS devices [ 43 , 44 ], SiN circular membrane MEMS devices [ 45 , 46 ], and CMOS MEMS-based membrane-bridge devices [ 47 ] particularly useful for industrial applications. Moreover, the scientific community is intensively working on the analysis/synthesis of multi-physical models characterized by a high degree of symmetry, because these are more easily achievable from a technological point of view [ 24 , 30 , 48 , 49 , 50 , 51 ]. Accordingly, we have focused our attention on a 2 D circular membrane MEMS device, a kind of geometry widely used in many industrial applications [ 24 , 25 , 48 , 52 ].…”
Section: Introductionmentioning
confidence: 99%
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