A 2D Proof of Principle Towards a 3D Digital SiPM in HV CMOS With Low Output Capacitance

Nolet, F.; Rheaume, Vincent-Philippe; Parent, Samuel; Charlebois, Serge A.; Fontaine, R.; Pratte, J.‐F.

doi:10.1109/tns.2016.2582686

Cited by 29 publications

(20 citation statements)

References 35 publications

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“…We propose to use a 3D digital SiPM as a solution to all aforementioned problems ( Figure 1) [30][31][32][33]. In this approach, different silicon tiers dedicated to specific functions are stacked and routed using vertical interconnections.…”

Section: Introductionmentioning

confidence: 99%

Quenching Circuit and SPAD Integrated in CMOS 65 nm with 7.8 ps FWHM Single Photon Timing Resolution

et al. 2018

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This paper presents a new quenching circuit (QC) and single photon avalanche diode (SPAD) implemented in TSMC CMOS 65 nm technology. The QC was optimized for single photon timing resolution (SPTR) with a view to an implementation in a 3D digital SiPM. The presented QC has a timing jitter of 4 ps full width at half maximum (FWHM) and the SPAD and QC has a 7.8 ps FWHM SPTR. The QC adjustable threshold allows timing resolution optimization as well as SPAD excess voltage and rise time characterization. The adjustable threshold, hold-off and recharge are essential to optimize the performances of each SPAD. This paper also provides a better understanding of the different contributions to the SPTR. A study of the contribution of the SPAD excess voltage variation combined to the QC time propagation delay variation is presented. The proposed SPAD and QC eliminates the SPAD excess voltage contribution to the SPTR for excess voltage higher than 1 V due to its fixed time propagation delay.

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Section: Introductionmentioning

confidence: 99%

Quenching Circuit and SPAD Integrated in CMOS 65 nm with 7.8 ps FWHM Single Photon Timing Resolution

et al. 2018

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“…The application of silicon technology to the development of low photon flux sensors—later known as silicon photomultipliers (SiPMs)—can be traced back to the late 1970s [ 1 ], when a space-distributed fine array of metal resistor semiconductor (MRS) micro-sensors was conceived with individual quenching and common output. Since then, the SiPM R&D is dominating the panorama of modern research in the field of low photon flux detectors, with the synergy and unique contribution of a large number of groups during the last 30 years [ 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ]. Modern SiPMs are composed of an array of p/n-junctions (microcells) operated in Geiger mode, with individual passive quenching resistors, as reported in Figure 1 .…”

Section: Introductionmentioning

confidence: 99%

“…The avalanche pixel image sensors and the avalanche pixel tracking sensors use this technology for low photon flux and ionizing radiation, respectively [ 16 , 17 ]. The application of CMOS SPAD sensor solutions to digital SiPM was demonstrated among others in the 800 nm [ 10 ] and 350 nm [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

“…The CMOS technology offers few possibilities of implementing such guard rings [ 19 , 20 , 21 , 22 ]. By way of example, SPAD, SPAD arrays, and SiPM detection structures with several possible layout techniques for the implementation of guard rings were successfully implemented in 800 nm [ 10 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 ], 700 nm [ 31 ], 500 nm [ 32 , 33 ], 350 nm [ 18 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ], 180 nm [ 47 , 48 , 49 ], 150 nm [ 50 ], 130 nm [ 15 , 51 , 52 , 53 , 54 , 55 ], and 90 nm [ 56 , 57 ] CMOS nodes, and were used to detect single photon signals on the basis of the avalanche breakdown process. Two main limitations of the CMOS technology remain; namely, the higher dark rate and the lower photon detection efficiency with respect to the custom-technology-based conventional SiPMs.…”

Section: Introductionmentioning

confidence: 99%

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Application of CMOS Technology to Silicon Photomultiplier Sensors

D’Ascenzo

Zhang

Xie

2017

Sensors

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We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.

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“…When performing single-photon counting with analog SiPMs, these fluctuations blur the spectrum at high photon counts. With a PDC, each triggered SPAD raises a flag processed by the digital logic [ 41 , 42 , 46 , 47 , 48 ]. Most variations in the SPAD’s response are thus masked by the digital conversion performed by the quenching circuit which therefore provides a greater SPAD-to-SPAD variation immunity.…”

Section: Analog Versus Digital Spad Arraymentioning

confidence: 99%

3D Photon-To-Digital Converter for Radiation Instrumentation: Motivation and Future Works

Pratte

Nolet

Parent

et al. 2021

Sensors

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Analog and digital SiPMs have revolutionized the field of radiation instrumentation by replacing both avalanche photodiodes and photomultiplier tubes in many applications. However, multiple applications require greater performance than the current SiPMs are capable of, for example timing resolution for time-of-flight positron emission tomography and time-of-flight computed tomography, and mitigation of the large output capacitance of SiPM array for large-scale time projection chambers for liquid argon and liquid xenon experiments. In this contribution, the case will be made that 3D photon-to-digital converters, also known as 3D digital SiPMs, have a potentially superior performance over analog and 2D digital SiPMs. A review of 3D photon-to-digital converters is presented along with various applications where they can make a difference, such as time-of-flight medical imaging systems and low-background experiments in noble liquids. Finally, a review of the key design choices that must be made to obtain an optimized 3D photon-to-digital converter for radiation instrumentation, more specifically the single-photon avalanche diode array, the CMOS technology, the quenching circuit, the time-to-digital converter, the digital signal processing and the system level integration, are discussed in detail.

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A 2D Proof of Principle Towards a 3D Digital SiPM in HV CMOS With Low Output Capacitance

Cited by 29 publications

References 35 publications

Quenching Circuit and SPAD Integrated in CMOS 65 nm with 7.8 ps FWHM Single Photon Timing Resolution

Quenching Circuit and SPAD Integrated in CMOS 65 nm with 7.8 ps FWHM Single Photon Timing Resolution

Application of CMOS Technology to Silicon Photomultiplier Sensors

3D Photon-To-Digital Converter for Radiation Instrumentation: Motivation and Future Works

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