2013
DOI: 10.7498/aps.62.098502
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A 2D semi-analytical model for the potential distribution of ultra-short channel MOSFET

Abstract: Based on the principle of ultra-short channel MOSFET, a definite solution of potential is proposed by introducing two rectangular sources between the insulated gate and the space-charge region. By using the semi-analytical method and the spectral method, the 2D semi-analytical solution has been obtained for the first time as faras we know. The solution is a special function for the infinite series expressions. The most advantage of this model is that it can not only be calculated directly without numerical ana… Show more

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