A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects

Xu, Jing-Ping; Li, Y.P.; Lai, P. T.; Chen, W.B.; Xu, Shengguo

doi:10.1016/j.microrel.2006.12.007

Microelectronics Reliability

2008

DOI: 10.1016/j.microrel.2006.12.007

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A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects

Jing-Ping Xu

Y.P. Li

P. T. Lai

et al.

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2011

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Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET

Wang¹,

Zhang²,

Wang³

et al. 2011

Acta Phys. Sin.

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In this paper, based on the two-dimensional (2D) Possion's equation, an analytical model of threshold voltage, which is applied to a sub-100nm strained-Si/SiGe nMOSFET, is pro- posed. The secondary effects induced by reducing size such as short-channel effects, quantum mechanical effects are also taken into consideration in order to ensure the accuracy of the model. Then the evidence for the validity of our model is derived from the comparison between analytical results and the simulation data from the 2D device simulator ISE. Finally, the influence of conventional arts in sub-100 nm device fabrication on threshold voltage is also discussed. The proposed model can also be easily used for reasonable analysis and design of sub-100nm strained-Si/SiGe nMOSFET.

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Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET

Wang¹,

Zhang²,

Wang³

et al. 2011

Acta Phys. Sin.

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show abstract

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A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects

Cited by 1 publication

References 7 publications

Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET

Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET

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