A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance

Yoon, Jongwoon; Kim, Kwangsoo

doi:10.1088/1674-4926/42/6/062803

Cited by 4 publications

(2 citation statements)

References 20 publications

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“…[36] As a representative wide bandgap semiconductor, SiC has advantages such as high critical breakdown electric field, high thermal conductivity, and high carrier saturation drift velocity, which is suitable for optoelectronic, radiation-resistant, highpower, high-temperature fields. [37][38][39][40] Meanwhile, It promises to investigate SiC/Graphene (SG) heterojunction PDs to achieve UV-visible dual-band detection due to the wide bandgap and significant response to UV light of SiC. However, the Graphene/SiC/Graphene (GSG) UV PDs exhibit relatively low responsivity and quantum efficiency due to the nanometer-thick depletion layer at the SG junction.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

Zhang,

Sun,

Zhu

et al. 2024

Advanced Optical Materials

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High‐quality epitaxial graphene is prepared on semi‐insulated 4H‐SiC (0001) by ultra‐high vacuum thermal decomposition method and used in graphene/SiC/graphene ultraviolet‐visible dual‐band photodetectors. The dual‐band detector exhibits an extremely low dark current (5.2 × 10−14 A) and a peak responsivity of 1.17 A W−1 corresponding to an external quantum efficiency of 518%. A high detectivity of 3.14 × 1014 Jones is achieved under 280 nm light illumination at 30 V, while a high response speed is obtained with a rise time of 25.17 ns and a decay time of 540.10 ns. The detector shows a responsivity of 1.4 × 10−5 A W−1 and a detectivity of 6.5 × 109 Jones under 430 nm light illumination. The dual‐band detector equipped with SiC grating and asymmetrical graphene electrodes is demonstrated for high‐performance optoelectronic logic “AND” gate with high detectivity at 280 and 430 nm.

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Section: Introductionmentioning

confidence: 99%

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

Zhang,

Sun,

Zhu

et al. 2024

Advanced Optical Materials

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“…As one of the most well-developed wide-bandgap semiconductors, 4H silicon carbide (4H-SiC) has broad application prospects in high-power, high-frequency and hightemperature electronics due to its superior properties of high breakdown field strength, high electron mobility and high thermal conductivity [1][2][3][4][5]. Starting from 4H-SiC boules, the mechanical processing of 4H-SiC wafers includes wire sawing, lapping, and chemical mechanical polishing (CMP) [6].…”

Section: Introductionmentioning

confidence: 99%

Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping

Zhang¹,

Liu²,

Wang³

et al. 2023

Semicond. Sci. Technol.

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In this letter, we optimize the flatness of 4H silicon carbide (4H SiC) wafers by tuning the sequence-of single-sided lapping, enlightened by the different mechanical properties of the Si face and C face of 4H-SiC. After wire sawing, the coarse lapping and fine lapping are carried out to rapidly remove the surface damages and optimize the flatness of 4H-SiC wafers. From the point of view of controlling the values of the bow and warp of 4H-SiC wafers, the coarse-lapping sequence of the C-face lapping followed by Si-face lapping is beneficial, while the preferred fine-lapping sequence is Si-face lapping followed by C-face lapping. Nanoindentation tests indicate that the C face has higher hardness and lower fracture toughness the Si face. This gives rise to thicker surface damages at the C face after the wire sawing. After removing the same amount of wire-sawing induced surface damages, the thickness of residual surface damages of the C face is higher than that of the Si face after the coarse lapping. Since the fine lapping basically removes all the surface damages, and creates near-perfect C face and Si face. The higher amount of surface damages of the C face after the coarse lapping and the higher fracture toughness of the near-perfect Si face after the fine lapping can tolerate more plastic deformations, which gives rise to the superior flatness of the C-face followed-by-Si-- face coarse lapped and the Si-face-followed-by-C-face fine lapped 4H-SiC wafers, respectively.

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Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

Yang¹,

Luo²,

Li³

et al. 2022

J. Semicond.

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Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide (4H-SiC), which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers. In this work, we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations (TSDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) in 4H-SiC. In n-type 4H-SiC, the inclination angles of the etch pits of TSDs, TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°, 8°−15° and 2°−4°, respectively. In semi-insulating 4H-SiC, the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34° and 21°−24°, respectively. The inclination angles of dislocation-related etch pits are independent of the etching duration, which facilitates the discrimination and statistic of dislocations in 4H-SiC. More significantly, the inclination angle of a threading mixed dislocations (TMDs) is found to consist of characteristic angles of both TEDs and TSDs. This enables to distinguish TMDs from TSDs in 4H-SiC.

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A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance

Cited by 4 publications

References 20 publications

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping

Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

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