A 3.5 GHz fully integrated power amplifier module

Blount, Paul; Cuggino, J.; McPhee, J.

doi:10.1109/gaas.2001.964358

Cited by 2 publications

(1 citation statement)

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“…Previously, an InGaP HBT fully integrated PA module, operating at only a 5-V drain Manuscript voltage, with 44% PAE and 27.5 dBm of 1-dB gain compression output power, has been demonstrated [3]. Nevertheless, the output power of this PA is not high enough for the W-CDMA applications.…”

Section: Introductionmentioning

confidence: 97%

A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications

Chu

Huang

Liu

et al. 2005

IEEE Microw. Wireless Compon. Lett.

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A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8 GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 50 input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4 dB small-signal gain and 34 dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24 dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5 GHz is also achieved. Index Terms-Monolithic microwave integrated circuit (MMIC), pseudomorphic high electronic mobility transistor (PHEMT), power amplifier (PA), wideband code division multiple access (W-CDMA).

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Section: Introductionmentioning

confidence: 97%