A 3.9 μm pixel pitch VGA format 10 b digital image sensor with 1.5-transistor/pixel

Takahashi, Hidekazu; Kinoshita, M.; Morita, K.; Shirai, Takahiro; Sato, Toshiaki; Kimura, Takayuki; Yuzurihara, Hiroshi; Inoue, Shunsuke

doi:10.1109/isscc.2004.1332617

Cited by 13 publications

(13 citation statements)

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“…A pinned-photodiode-based 4-Tr APS structure is preferred over a 3-Tr structure in an APS because the former offers performance advantages such as low dark current and high sensitivity [1]. However, the pinnedphotodiode-based 4-Tr APS suffers from disadvantages such as a low fill factor resulting from the use of additional transistors, a low dynamic range (DR) associated with a low well capacity, and high cost since a modification in the conventional CMOS process is required [2][3].…”

Section: Introductionmentioning

confidence: 99%

Linear-logarithmic Active Pixel Sensor with Photogate for Wide Dynamic Range CMOS Image Sensor

Bae¹,

Jo²,

Choi³

et al. 2015

Journal of Sensor Science and Technology

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This paper proposes a novel complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) and presents its performance characteristics. The proposed APS exhibits a linear-logarithmic response, which is simulated using a standard 0.35-µm CMOS process. To maintain high sensitivity and improve the dynamic range (DR) of the proposed APS at low and high-intensity light, respectively, two additional nMOSFETs are integrated into the structure of the proposed APS, along with a photogate. The applied photogate voltage reduces the sensitivity of the proposed APS in the linear response regime. Thus, the conversion gain of the proposed APS changes from high to low owing to the addition of the capacitance of the photogate to that of the sensing node. Under high-intensity light, the integrated MOSFETs serve as voltage-light dependent active loads and are responsible for logarithmic compression. The DR of the proposed APS can be improved on the basis of the logarithmic response. Furthermore, the reference voltages enable the tuning of the sensitivity of the photodetector, as well as the DR of the APS.

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Section: Introductionmentioning

confidence: 99%

Linear-logarithmic Active Pixel Sensor with Photogate for Wide Dynamic Range CMOS Image Sensor

Bae¹,

Jo²,

Choi³

et al. 2015

Journal of Sensor Science and Technology

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“…Thermal decomposition of organic materials in the sensor chip and/or the package is also an issue. Several papers have reported dark current reduction approaches [5,6]. However a temperature-resistant image sensing solution has not been clearly reported as the discussion has just started [7].…”

Section: Introductionmentioning

confidence: 99%

A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance

et al. 2008

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A 1/4 inch VGA 5.6 µm pixel pitch wide dynamic range (WDR) CMOS image sensor with resistance to high temperatures has been developed using a very-low-dark-current front-end of line (VLDC FEOL), a metal hermetic seal package and/or the inorganic cap layer to suppress the degradation of the spectra response of the on-chip micro lens and color filter (OCML/OCCF). The dark current is reduced to 175 e -/sec-pixel at 85˚C (25 e -/sec-pixel at 60˚C) by the use of VLDC FEOL. Sensor chips with no cap and an inorganic cap onto the OCML were assembled into a metal seal package and a conventional package respectively. They were exposed to a 150˚C/ 500 hours thermal-stress test in the air. No degradation of the spectra response in any of R/G/B pixels for both samples is observed after the thermal stress test. The sample images captured by the WDR CMOS image sensor with and without the thermal stress show no significant degradation in image quality up to 85˚C. The image sensing performance results in a low noise and huge effective saturation voltage. The dynamic range is extended to 93 dB.

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“…T HE LOW-VOLTAGE operation of CMOS active pixel sensors (CAPSs) has been a key performance requirement for portable devices, such as personal digital assistants, cell phones, and digital still cameras [1]- [3]. The pinned photodiode (PPD)-based four-transistor pixel is widely used in CAPSs due to the low noise level and high sensitivity [2], [3].…”

Section: Introductionmentioning

confidence: 99%

“…The pinned photodiode (PPD)-based four-transistor pixel is widely used in CAPSs due to the low noise level and high sensitivity [2], [3]. However, the PPD-based pixels have shown some limitations in pixel operation especially at low voltage mainly due to the incomplete charge transfer and difficulty of full depletion in the PPD, which result in a high random noise level [1]- [3].…”

Section: Introductionmentioning

confidence: 99%

Sub-1-V Supply Self-Adaptive CMOS Image Sensor Cell With 86-dB Dynamic Range

Lee

Yang

2007

IEEE Electron Device Lett.

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This letter presents a high dynamic range CMOS active pixel structure operating at a sub-1-V supply voltage, which is implemented using a standard 0.18-µm CMOS logic process. In order to improve the output voltage swing range and associated pixel dynamic range at a low supply voltage, a pMOS reset structure is incorporated into the pixel structure along with a photogate pixel structure based on the self-adaptive photosensing operation. At a low supply voltage of 0.9 V, the new pixel provides an output voltage swing range of 0.41 V and a high dynamic range of 86 dB, which is the highest among the reported pixel structures up to date operating at sub-1-V.Index Terms-Adaptive sensitivity, CMOS active pixel sensor (CAPS), high dynamic range, low supply voltage.

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A 3.9 μm pixel pitch VGA format 10 b digital image sensor with 1.5-transistor/pixel

Cited by 13 publications

References 0 publications

Linear-logarithmic Active Pixel Sensor with Photogate for Wide Dynamic Range CMOS Image Sensor

Linear-logarithmic Active Pixel Sensor with Photogate for Wide Dynamic Range CMOS Image Sensor

A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance

Sub-1-V Supply Self-Adaptive CMOS Image Sensor Cell With 86-dB Dynamic Range

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