A 3&amp;#x2013;20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications

Howard, Duane C.; Poh, John Chung Hang; Mukerjee, Tonmoy S.; Cressler, John D.

doi:10.1109/mwscas.2010.5548729

Cited by 13 publications

(13 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The experimental results of the proposed differential (IF) amplifier design compare favourably also with some earlier reported single-ended silicon based wideband amplifier designs [13][14][15][16][17][18] in terms of achieving a higher/similar peak gain or more wideband input/output matching. The presented differential SiGe amplifier has typically 1-2 dB higher in-band NF than those single-ended designs.…”

Section: Wwwietdlorgsupporting

confidence: 70%

“…The proposed wideband IF amplifier is a novel implementation of such a differential circuit design which for the first time has been realised in a 0. 13 2 Component requirements for a W-band passive imaging application A W-band passive imager works at stand-off distances (2-20 m) to detect objects hidden under clothing for security screening purposes (concealed weapons and explosives detection). Such a radiometric system is characterised by its thermal resolution or noise equivalent temperature difference (NETD) which is given by [4][5][6] …”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Reyaz

Malmqvist

Gustafsson

et al. 2015

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

This study presents the results of a high-gain and wideband differential intermediate frequency (IF) amplifier circuit design for a W-band passive imaging single-chip (down-conversion) receiver front-end. The cascaded two-stage IF amplifier was fabricated in a 0.13 μm SiGe BiCMOS process technology with 300 GHz/500 GHz f T /f max . In total six on-chip inductors are used in the input, output and inter-stage matching networks which enable relatively broadband RF properties together with a compact circuit size for the IF amplifier (the die area is 0.27 mm 2 incl. RF and DC pads). The broadband SiGe amplifier has a measured gain of 10-19.5 dB at 2-37 GHz (|s 11 | and |s 22 | ≤ −10 dB at 7-40 GHz and 8-35 GHz, respectively), noise figure of 6.3-8.0 dB at 2-26 GHz and output third order intercept points of 7-17 dBm at 1-40 GHz (the DC power consumption is 122 mW). To the authors' best knowledge, this work reports a first-time realisation of a differential IF amplifier made in a 0.13 μm SiGe BiCMOS technology that achieves such wideband impedance matching together with a high gain and reasonably low noise properties over a wide instantaneous bandwidth (|s 21 | = 15-19.5 dB at 3-26 GHz).

show abstract

Section: Wwwietdlorgsupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Reyaz

Malmqvist

Gustafsson

et al. 2015

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

show abstract

“…1 can be easily computed using the equivalent circuit model shown in Fig. 2, as represented in (8). This exhibits the maximum gain at the resonant frequency of resonator composed of feedback inductor and load capacitor.…”

Section: Design Philosophymentioning

confidence: 99%

“…Capacitive feedback or active feedback can be utilized to compensate for the gain decrease in resistive feedback amplifiers [5,6]. Conventionally inductive peaking or capacitive peaking has been employed to obtain a bandwidth extension [7][8][9][10]. However, analytic expressions for return loss or input impedance have not been fully derived for this topology using inductive peaking.…”

Section: Introductionmentioning

confidence: 99%

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

Jeong¹,

Cho

Min³

2014

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

Abstract-Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, important performance metrics such as voltage gain, return loss, noise figure and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high impedance-matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that input impedance can be described in the form of second-order frequency response, where poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor located between the gate and the drain decreases the third-order harmonics at the output. Fabricated in 0.18 µm CMOS process, the chip area of this wideband LNA is 0.202 mm 2 , including pads. Measurement results illustrate that the input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 6-8 dB over 1.5 -13 GHz. In addition, good linearity (IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

show abstract

“…Recently, wideband technology has attracted a lot of academic and industrial interests because of the advantages including low cost, low power, fading robustness, position location capability, and flexibility [1]- [4]. In wideband receiver front-end design, wideband LNA is a critical block that receives small signals from antenna and then amplifies them with a good SNR property over the whole band of interest.…”

Section: Introductionmentioning

confidence: 99%

A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology

Lin

Wang

Lee

2014

2014 IEEE Radio and Wireless Symposium (RWS)

View full text Add to dashboard Cite

A 1.9~22.5 GHz wideband LNA based on the current-reused cascade configuration in 90 nm CMOS is reported. The wideband input-impedance matching was achieved by taking advantage of the resistive shunt-shunt feedback in conjunction with a parallel LC load to make the input network equivalent to two parallel RLC branches, i.e., a second-order wideband BPF. The wideband output matching was also achieved by making the output network equivalent to a second-order wideband BPF. Theoretical analysis shows that both the frequency response of input matching and NF can be described by second-order functions with quality factors as parameters. The LNA dissipates 9.96 mW and achieves low and flat NF of 3.24±0.5 dB and high and flat S21 of 12.02±1.5 dB for frequencies 1.9~22.5 GHz. The corresponding FOM is 7.44 GHz/mW, one of the highest FOMs ever reported for an LNA with bandwidth around 20 GHz.

show abstract

A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications

Cited by 13 publications

References 2 publications

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology

Contact Info

Product

Resources

About

A 3&#x2013;20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications

Cited by 13 publications

References 2 publications

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

A 9.96 mW 3.24&#x00B1;0.5 dB NF 1.9&#x223C;22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology

Contact Info

Product

Resources

About

A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications

A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology