A 3-D Camera With Adaptable Background Light Suppression Using Pixel-Binning and Super-Resolution

Cho, Ji-Hyun; Choi, Jaehyuk; Kim, Seong‐Jin; Park, Seokjun; Shin, Jungsoon; Kim, James D. K.; Yoon, Euisik

doi:10.1109/jssc.2014.2340377

Cited by 38 publications

(13 citation statements)

References 29 publications

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“…In a conventional CIS camera, only two-dimensional (2D) images without depth information can be obtained. To obtain depth information, time-of-flight, stereo vision, and structured light techniques have been used [4,5,6,7,8,9,10,11]. These techniques, however, have disadvantages.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Disparity Information for Depth Extraction Using CMOS Image Sensor with Offset Pixel Aperture Technique

Choi

Lee

Kim

et al. 2019

Sensors

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A complementary metal oxide semiconductor (CMOS) image sensor (CIS), using offset pixel aperture (OPA) technique, was designed and fabricated using the 0.11-µm CIS process. In conventional cameras, an aperture is located on the camera lens. However, in a CIS camera using OPA technique, apertures are integrated as left-offset pixel apertures (LOPAs) and right-offset pixel apertures (ROPAs). A color pattern is built, comprising LOPA, blue, red, green, and ROPA pixels. The disparity information can be acquired from the LOPA and ROPA channels. Both disparity information and two-dimensional (2D) color information can be simultaneously acquired from the LOPA, blue, red, green, and ROPA channels. A geometric model of the OPA technique is constructed to estimate the disparity of the image, and the measurement results are compared with the estimated results. Depth extraction is thus achieved by a single CIS using the OPA technique, which can be easily adapted to commercial CIS cameras.

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Section: Introductionmentioning

confidence: 99%

Analysis of Disparity Information for Depth Extraction Using CMOS Image Sensor with Offset Pixel Aperture Technique

Choi

Lee

Kim

et al. 2019

Sensors

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“…Therefore, high spatial resolution is difficult to be implemented. Among the 3D imaging methods, the iTOF method provides high depth accuracy, simple post processing, and high spatial resolution using small photodetectors (such as pinned photodiodes or photogates) that are widely used in 2D image sensors [10,11,12,13]. In the iTOF depth sensor, the four-phase modulation scheme is usually used to provide an accurate depth regardless of the reflectivity of objects while suppressing the offset from ambient lights.…”

Section: Introductionmentioning

confidence: 99%

Indirect Time-of-Flight Depth Sensor with Two-Step Comparison Scheme for Depth Frame Difference Detection

Kim

Choi

2019

Sensors

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A depth sensor with integrated frame difference detection is proposed. Instead of frame difference detection using light intensity, which is vulnerable to ambient light, the difference in depth between successive frames can be acquired. Because the conventional time-of-flight depth sensor requires two frames of depth-image acquisition with four-phase modulation, it has large power consumption, as well as a large area for external frame memories. Therefore, we propose a simple two-step comparison scheme for generating the depth frame difference in a single frame. With the proposed scheme, only a single frame is needed to obtain the frame difference, with less than half of the power consumption of the conventional depth sensor. Because the frame difference is simply generated by column-parallel circuits, no access of the external frame memory is involved, nor is a digital signal processor. In addition, we used an over-pixel metal–insulator–metal capacitor to store temporary signals for enhancing the area efficiency. A prototype chip was fabricated using a 90 nm backside illumination complementary metal–oxide–semiconductor (CMOS) image sensor process. We measured the depth frame difference in the range of 1–2.5 m. With a 10 MHz modulation frequency, a depth frame difference of >10 cm was successfully detected even for objects with different reflectivity. The maximum relative error from the difference of the reflectivity (white and wooden targets) was <3%.

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“…Further improvements were later proposed to deal with the saturation due to the background light, by including extra circuitry that subtracts the background contribution from the signal after several pulses have been accumulated. ()…”

Section: Introductionmentioning

confidence: 99%

Pulsed time‐of‐flight pixel with on‐chip 20 klux background light suppression in standard CMOS technology

Illade-Quinteiro

López

Brea

et al. 2017

Circuit Theory & Apps

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A novel time-of-flight pixel designed in 0.18-m standard CMOS technology with an indirect pulsed technique is presented. This design is capable of operating in ambients with high levels of background light, since a novel in-pixel background suppression circuit makes it robust up to 20 klux of ambient light.In addition to this, the pixel incorporates an adaptive number of accumulations circuit that selects the optimum number of accumulations for each situation at pixel level, avoiding saturation even under high illumination conditions. KEYWORDS 3D sensor, optical sensor, standard CMOS technology, time of flight Int J Circ Theor Appl. 2018;46:987-1005.wileyonlinelibrary.com/journal/cta

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A 3-D Camera With Adaptable Background Light Suppression Using Pixel-Binning and Super-Resolution

Cited by 38 publications

References 29 publications

Analysis of Disparity Information for Depth Extraction Using CMOS Image Sensor with Offset Pixel Aperture Technique

Analysis of Disparity Information for Depth Extraction Using CMOS Image Sensor with Offset Pixel Aperture Technique

Indirect Time-of-Flight Depth Sensor with Two-Step Comparison Scheme for Depth Frame Difference Detection

Pulsed time‐of‐flight pixel with on‐chip 20 klux background light suppression in standard CMOS technology

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