A 3-nm FinFET 27.6-Mbit/mm<sup>2</sup> Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking

Aoyagi, Yumito; Nii, Koji; Yabuuchi, Makoto; Tanaka, Tomotaka; Ishii, Yuichiro; Osada, Yoshiaki; Nakazato, Takaaki; Wang, Isabel; Hsu, Yu-Hao; Cheng, Hong-Chen; Liao, Hung-Jen; Chang, Tsung-Yung Jonathan

doi:10.1109/jssc.2024.3355447

IEEE J. Solid-State Circuits

2024

DOI: 10.1109/jssc.2024.3355447

|View full text |Cite

A 3-nm FinFET 27.6-Mbit/mm² Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking

Yumito Aoyagi,

Koji Nii,

Makoto Yabuuchi

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Publication Types

Select...

Relationship

Self Cite0

Independent0

Authors

Journals

Cited by 0 publications

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

No citations

Set email alert for when this publication receives citations?

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A 3-nm FinFET 27.6-Mbit/mm² Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking

Cited by 0 publications

References 28 publications

No citations

Contact Info

Product

Resources

About

A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking

Cited by 0 publications

References 28 publications

No citations

Contact Info

Product

Resources

About

A 3-nm FinFET 27.6-Mbit/mm² Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking